MBR30H60CTG Tech Spezifikatioune
onsemi - MBR30H60CTG technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - MBR30H60CTG
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Viru (Vf) (Max) @ Wann | 620 mV @ 15 A | |
| Voltage - DC Reverse (Vr) (Max) | 60 V | |
| Technologie | Schottky | |
| Supplier Device Package | TO-220 | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | SWITCHMODE™ | |
| Package / Case | TO-220-3 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tube | |
| Operatiounstemperatur - Junction | -55°C ~ 175°C | |
| Mounting Type | Through Hole | |
| Diode Configuration | 1 Pair Common Cathode | |
| Aktuell - Reverse Leakage @ Vr | 300 µA @ 60 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 15A | |
| Basis Produktnummer | MBR30H60 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi MBR30H60CTG.
| Produktiounsattriff |  |
 |
|
 |
|---|---|---|---|---|
| Part Number | MBR30H60CTG | MBR30L60CT | MBR30L100CT | MBR30H60CT-E3/45 |
| Hiersteller | onsemi | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Vishay General Semiconductor - Diodes Division |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Supplier Device Package | TO-220 | TO-220AB | TO-220AB | TO-220-3 |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Basis Produktnummer | MBR30H60 | MBR30 | MBR30 | MBR30 |
| Technologie | Schottky | Schottky | Schottky | Schottky |
| Serie | SWITCHMODE™ | - | - | - |
| Voltage - Viru (Vf) (Max) @ Wann | 620 mV @ 15 A | 600 mV @ 15 A | 770 mV @ 15 A | 680 mV @ 15 A |
| Aktuell - Reverse Leakage @ Vr | 300 µA @ 60 V | 480 µA @ 60 V | 500 µA @ 100 V | 60 µA @ 60 V |
| Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode |
| Operatiounstemperatur - Junction | -55°C ~ 175°C | -55°C ~ 150°C | -55°C ~ 150°C | -65°C ~ 175°C |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Voltage - DC Reverse (Vr) (Max) | 60 V | 60 V | 100 V | 60 V |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 15A | 30A | 30A | 15A |
Eroflueden MBR30H60CTG PDF DataDhusts an onsemi Dokumentatioun fir MBR30H60CTG - onsemi.
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MBR30H45PTMBR30H60CT-E3/45Vishay General Semiconductor - Diodes DivisionDIODE ARRAY SCHOTTKY 60V TO220ABMBR30H30GAMI Semiconductor/onsemiMBR30L45CTGonsemiDIODE ARRAY SCHOTTKY 45V TO220ABMBR30L150AMBR30H45CTHE3/45Vishay General Semiconductor - Diodes DivisionDIODE ARRAY SCHOTTKY 45V TO220ABMBR30H60CTE3AMI Semiconductor/onsemiMBR30L100MBR30L120CTTaiwan Semiconductor CorporationDIODE ARRAY SCHOTTKY 120V TO220MBR30L45CTTaiwan Semiconductor CorporationDIODE ARRAY SCHOTTKY 45V TO220ABMBR30H45CT-E3/45Vishay General Semiconductor - Diodes DivisionDIODE ARRAY SCHOTTKY 45V TO220ABMBR30H30CTGonsemiDIODE ARRAY SCHOTTKY 30V TO220AB| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
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| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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