MBR2560CT Tech Spezifikatioune
onsemi - MBR2560CT technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - MBR2560CT
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Viru (Vf) (Max) @ Wann | 750 mV @ 12.5 A | |
| Voltage - DC Reverse (Vr) (Max) | 60 V | |
| Technologie | Schottky | |
| Supplier Device Package | TO-220-3 | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Package / Case | TO-220-3 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tube | |
| Operatiounstemperatur - Junction | -65°C ~ 150°C | |
| Mounting Type | Through Hole | |
| Diode Configuration | 1 Pair Common Cathode | |
| Aktuell - Reverse Leakage @ Vr | 1 mA @ 60 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 12.5A | |
| Basis Produktnummer | MBR2560 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi MBR2560CT.
| Produktiounsattriff |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | MBR2560CT | MBR2545CTG | MBR2560CT-E3/45 | MBR2545CT-E3/45 |
| Hiersteller | onsemi | onsemi | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
| Aktuell - Reverse Leakage @ Vr | 1 mA @ 60 V | 200 µA @ 45 V | 1 mA @ 60 V | 200 µA @ 45 V |
| Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode |
| Voltage - Viru (Vf) (Max) @ Wann | 750 mV @ 12.5 A | 620 mV @ 15 A | 750 mV @ 15 A | 820 mV @ 30 A |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Basis Produktnummer | MBR2560 | MBR2545 | MBR2560 | MBR2545 |
| Serie | - | SWITCHMODE™ | - | - |
| Technologie | Schottky | Schottky | Schottky | Schottky |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Supplier Device Package | TO-220-3 | TO-220 | TO-220-3 | TO-220-3 |
| Voltage - DC Reverse (Vr) (Max) | 60 V | 45 V | 60 V | 45 V |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Operatiounstemperatur - Junction | -65°C ~ 150°C | -65°C ~ 175°C | -65°C ~ 150°C | -65°C ~ 150°C |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 12.5A | 15A | 15A | 15A |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Eroflueden MBR2560CT PDF DataDhusts an onsemi Dokumentatioun fir MBR2560CT - onsemi.
MBR2545CTGB2545GAMI Semiconductor/onsemiMBR2545CTGonsemiDIODE ARRAY SCHOTTKY 45V TO220ABMBR2545GAMI Semiconductor/onsemiMBR2560CT-E3/45Vishay General Semiconductor - Diodes DivisionDIODE ARRAY SCHOTTKY 60V TO220ABMBR2545CT-E3/45Vishay General Semiconductor - Diodes DivisionDIODE ARRAY SCHOTTKY 45V TO220ABMBR25H45CTHE3/45Vishay General Semiconductor - Diodes DivisionDIODE ARRAY SCHOTTKY 45V TO220AB
MBR2560CT-E3/4WElectro-Films (EFI) / Vishay
MBR2560CT T/PPANJITMBR2550CTDiodes IncorporatedDIODE ARRAY SCHOTTKY 50V TO220AB
MBR2545CTTaiwan Semiconductor CorporationDIODE ARRAY SCHOTTKY 45V TO220ABMBR2545CTonsemiDIODE ARRAY SCHOTTKY 45V TO220ABMBR260LSFT1GMSVMBR2560CTTaiwan Semiconductor CorporationDIODE ARRAY SCHOTTKY 60V TO220ABMBR28045VMOTOROLAIGBT ModuleMBR28045IGBTIGBT ModuleMBR2560CTDiodes IncorporatedDIODE ARRAY SCHOTTKY 60V TO220ABMBR2545CTG/B2545GAMI Semiconductor/onsemiMBR2550CTonsemiDIODE ARRAY SCHOTTKY 50V TO220AB| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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