KBU8J Tech Spezifikatioune
onsemi - KBU8J technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - KBU8J
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Peak Reverse (Max) | 600 V | |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 8 A | |
| Technologie | Standard | |
| Supplier Device Package | KBU | |
| Serie | - | |
| Package / Case | 4-SIP, KBU |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Diode Type | Single Phase | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 600 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 8 A | |
| Basis Produktnummer | KBU8 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi KBU8J.
| Produktiounsattriff |  |
 |
|
|
|---|---|---|---|---|
| Part Number | KBU8J | KBU810 | KBU610 | KBU8K |
| Hiersteller | onsemi | Yangzhou Yangjie Electronic Technology Co.,Ltd | Yangzhou Yangjie Electronic Technology Co.,Ltd | GeneSiC Semiconductor |
| Supplier Device Package | KBU | KBU | KBU | KBU |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 600 V | 10 µA @ 1000 V | 10 µA @ 1000 V | 10 µA @ 800 V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Diode Type | Single Phase | Single Phase | Single Phase | Single Phase |
| Voltage - Peak Reverse (Max) | 600 V | 1 kV | 1 kV | 800 V |
| Basis Produktnummer | KBU8 | - | - | KBU8 |
| Package protegéieren | Bulk | Box | Box | Bulk |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 8 A | 8 A | 6 A | 8 A |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Technologie | Standard | Standard | Standard | Standard |
| Serie | - | - | - | - |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 8 A | 1.1 V @ 4 A | 1 V @ 3 A | 1 V @ 8 A |
| Package / Case | 4-SIP, KBU | 4-ESIP, KBU | 4-ESIP, KBU | 4-SIP, KBU |
Eroflueden KBU8J PDF DataDhusts an onsemi Dokumentatioun fir KBU8J - onsemi.
KBU6G-10C-1-LFDIODEKBU810Yangzhou Yangjie Electronic Technology Co.,LtdRECT BRIDGE 1000V 8A KBU
KBU8K-E3/51Electro-Films (EFI) / VishayKBU610Yangzhou Yangjie Electronic Technology Co.,LtdRECT BRIDGE 1000V 6A KBUKBU8KGeneSiC SemiconductorBRIDGE RECT 1PHASE 800V 8A KBUKBU806Yangzhou Yangjie Electronic Technology Co.,LtdRECT BRIDGE 600V 8A KBU
KBU8G-E4/51Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1PHASE 400V 8A KBUKBU8ME451
KBU8JGeneSiC SemiconductorBRIDGE RECT 1PHASE 600V 8A KBUKBU810G-B-00-00SEPKBU803GWKBU6K-E4/51Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1PHASE 800V 6A KBUKBU8KonsemiBRIDGE RECT 1PHASE 800V 8A KBUKBU8KFairchild SemiconductorBRIDGE RECTIFIER DIODEKBU6A-E4/51Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1PHASE 50V 6A KBUKBU8K-E4/51Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1PHASE 800V 8A KBUKBU8M-E4/51Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1PHASE 1KV 8A KBU
KBU808Yangjie TechnologyKBU 800V 8.0A Diodes Bridge Re| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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