HUF75545S3 Tech Spezifikatioune
onsemi - HUF75545S3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - HUF75545S3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | I2PAK (TO-262) | |
Serie | UltraFET™ | |
Rds On (Max) @ Id, Vgs | 10mOhm @ 75A, 10V | |
Power Dissipation (Max) | 270W (Tc) | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 3750 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 235 nC @ 20 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 80 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 75A (Tc) | |
Basis Produktnummer | HUF75 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi HUF75545S3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | HUF75545S3 | HUF75545S3S | HUF75545S3S | HUF75545S3 |
Hiersteller | onsemi | onsemi | Fairchild Semiconductor | Fairchild Semiconductor |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-262-3 Long Leads, I²Pak, TO-262AA |
Package protegéieren | Tube | Tube | Tube | Tube |
Power Dissipation (Max) | 270W (Tc) | 270W (Tc) | 270W (Tc) | 270W (Tc) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Mounting Type | Through Hole | Surface Mount | Surface Mount | Through Hole |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 75A (Tc) | 75A (Tc) | 75A (Tc) | 75A (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Gate Charge (Qg) (Max) @ Vgs | 235 nC @ 20 V | 235 nC @ 20 V | 235 nC @ 20 V | 235 nC @ 20 V |
Rds On (Max) @ Id, Vgs | 10mOhm @ 75A, 10V | 10mOhm @ 75A, 10V | 10mOhm @ 75A, 10V | 10mOhm @ 75A, 10V |
FET Feature | - | - | - | - |
Basis Produktnummer | HUF75 | HUF75 | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 3750 pF @ 25 V | 3750 pF @ 25 V | 3750 pF @ 25 V | 3750 pF @ 25 V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Serie | UltraFET™ | UltraFET™ | UltraFET™ | UltraFET™ |
Supplier Device Package | I2PAK (TO-262) | D²PAK (TO-263) | D2PAK (TO-263) | I2PAK (TO-262) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Entworf fir Source Voltage (Vdss) | 80 V | 80 V | 80 V | 80 V |
Eroflueden HUF75545S3 PDF DataDhusts an onsemi Dokumentatioun fir HUF75545S3 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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