HGTP7N60A4D Tech Spezifikatioune
onsemi - HGTP7N60A4D technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - HGTP7N60A4D
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Vce (on) (Max) @ Vge, Ic | 2.7V @ 15V, 7A | |
| Test Condition | 390V, 7A, 25Ohm, 15V | |
| Td (on / off) @ 25 ° C | 11ns/100ns | |
| Energie schalten | 55µJ (on), 60µJ (off) | |
| Supplier Device Package | TO-220-3 | |
| Serie | - | |
| Reverse Recovery Time (trr) | 34 ns | |
| Power - Max | 125 W |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Type | Standard | |
| IGBT Type | - | |
| Gate Charge | 37 nC | |
| Aktuell - Sammler Pulséiert (Icm) | 56 A | |
| Aktuell - Sammler (Ic) (Max) | 34 A | |
| Basis Produktnummer | HGTP7N60 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi HGTP7N60A4D.
| Produktiounsattriff |  |
|
|
 |
|---|---|---|---|---|
| Part Number | HGTP7N60A4D | HGTP3N60A4D | HGTP7N60B3D | HGTP7N60B3D |
| Hiersteller | onsemi | onsemi | onsemi | Harris Corporation |
| Test Condition | 390V, 7A, 25Ohm, 15V | 390V, 3A, 50Ohm, 15V | 480V, 7A, 50Ohm, 15V | 480V, 7A, 50Ohm, 15V |
| Input Type | Standard | Standard | Standard | Standard |
| Reverse Recovery Time (trr) | 34 ns | 29 ns | 37 ns | 37 ns |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | 600 V | 600 V | 600 V |
| Package protegéieren | Tube | Tube | Tube | Bulk |
| IGBT Type | - | - | - | - |
| Td (on / off) @ 25 ° C | 11ns/100ns | 6ns/73ns | 26ns/130ns | 26ns/130ns |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220AB |
| Aktuell - Sammler Pulséiert (Icm) | 56 A | 40 A | 56 A | 56 A |
| Gate Charge | 37 nC | 21 nC | 23 nC | 37 nC |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Serie | - | - | - | - |
| Basis Produktnummer | HGTP7N60 | HGTP3N60 | HGTP7N60 | - |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Aktuell - Sammler (Ic) (Max) | 34 A | 17 A | 14 A | 14 A |
| Energie schalten | 55µJ (on), 60µJ (off) | 37µJ (on), 25µJ (off) | 160µJ (on), 120µJ (off) | 160µJ (on), 120µJ (off) |
| Vce (on) (Max) @ Vge, Ic | 2.7V @ 15V, 7A | 2.7V @ 15V, 3A | 2.1V @ 15V, 7A | 2.1V @ 15V, 7A |
| Power - Max | 125 W | 70 W | 60 W | 60 W |
Eroflueden HGTP7N60A4D PDF DataDhusts an onsemi Dokumentatioun fir HGTP7N60A4D - onsemi.
HGTP3N60A4DonsemiIGBT 600V 17A 70W TO220ABHGTP7N60B3DonsemiIGBT 600V 14A 60W TO220ABHGTP7N60B3DHarris CorporationIGBT, 14A, 600V, N-CHANNEL, TO-2HGTP7N60C3DonsemiIGBT 600V 14A 60W TO220AB
HGTP3N60A4DFairchild SemiconductorN-CHANNEL IGBTHGTP3N60A4,G3N60A4Fairchild (onsemi)HGTP6N50E1DFairchild (onsemi)HGTP5N120BNDonsemiIGBT 1200V 21A 167W TO220ABHGTP7N60C3DFairchild SemiconductorN-CHANNEL IGBTHGTP7N60A4onsemiIGBT 600V 34A TO220-3HGTP7N60BHGTP3N60A4 3N60A4FSCHGTP7N60B3DFairchild SemiconductorN-CHANNEL IGBTHGTP7N60C3DHarris CorporationIGBT, 14A, 600V, N-CHANNEL, TO-2HGTP7N60A4 7N60A4FSCHGTP7N60A4 G7N60A4Fairchild (onsemi)HGTP7N60A4Fairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTOHGTP7N60A4D 7N60A4DFairchild (onsemi)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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