H11B815 Tech Spezifikatioune
onsemi - H11B815 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - H11B815
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Ausgab (Max) | 35V | |
| Voltage - Isolatioun | 5000Vrms | |
| Voltage - Viru (Vf) (Typ) | 1.2V | |
| Vce Saturation (Max) | 1V | |
| Turn On / Aus Dreck Time (Typ) | - | |
| Supplier Device Package | 4-DIP | |
| Serie | - | |
| Rise / Fall Zäit (Typ) | 300µs, 250µs (Max) | |
| Package / Case | 4-DIP (0.300', 7.62mm) | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Ausgängegkeet | Darlington | |
| Operatioun Temperatur | -55°C ~ 100°C | |
| Zuel vu Channels | 1 | |
| Mounting Type | Through Hole | |
| Input Type | DC | |
| Aktuellt Transferverhältnis (Min) | 600% @ 1mA | |
| Aktuellt Transferverhältnis (Max) | 7500% @ 1mA | |
| Aktuell - Ausgab / Kanal | 80mA | |
| Aktuell - DC Forward (Wann) (Max) | 50 mA | |
| Basis Produktnummer | H11B |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi H11B815.
| Produktiounsattriff |  |
 |
|
 |
|---|---|---|---|---|
| Part Number | H11B815 | H11B255 | H11B815300 | H11B815SD |
| Hiersteller | onsemi | Everlight Electronics Co Ltd | onsemi | onsemi |
| Aktuellt Transferverhältnis (Max) | 7500% @ 1mA | - | 7500% @ 1mA | 7500% @ 1mA |
| Package protegéieren | Tube | Tube | Tube | Tape & Reel (TR) |
| Ausgängegkeet | Darlington | Darlington with Base | Darlington | Darlington |
| Aktuell - DC Forward (Wann) (Max) | 50 mA | 60 mA | 50 mA | 50 mA |
| Turn On / Aus Dreck Time (Typ) | - | 25µs, 18µs | - | - |
| Operatioun Temperatur | -55°C ~ 100°C | -55°C ~ 100°C | -55°C ~ 100°C | -55°C ~ 100°C |
| Aktuell - Ausgab / Kanal | 80mA | - | 80mA | 80mA |
| Voltage - Ausgab (Max) | 35V | 55V | 35V | 35V |
| Basis Produktnummer | H11B | H11B2 | H11B | H11B |
| Voltage - Isolatioun | 5000Vrms | 5000Vrms | 5000Vrms | 5000Vrms |
| Zuel vu Channels | 1 | 1 | 1 | 1 |
| Input Type | DC | DC | DC | DC |
| Aktuellt Transferverhältnis (Min) | 600% @ 1mA | 100% @ 10mA | 600% @ 1mA | 600% @ 1mA |
| Serie | - | - | - | - |
| Rise / Fall Zäit (Typ) | 300µs, 250µs (Max) | - | 300µs, 250µs (Max) | 300µs, 250µs (Max) |
| Supplier Device Package | 4-DIP | 6-DIP | 4-DIP | 4-SMD |
| Vce Saturation (Max) | 1V | 1V | 1V | 1V |
| Voltage - Viru (Vf) (Typ) | 1.2V | 1.2V | 1.2V | 1.2V |
| Package / Case | 4-DIP (0.300', 7.62mm) | 6-DIP (0.300', 7.62mm) | 4-DIP (0.300", 7.62mm) | 4-SMD, Gull Wing |
| Mounting Type | Through Hole | Through Hole | Through Hole | Surface Mount |
Eroflueden H11B815 PDF DataDhusts an onsemi Dokumentatioun fir H11B815 - onsemi.
H11B255Everlight Electronics Co LtdOPTOISO 5KV DARL W/BASE 6DIP
H11B3VMAMI Semiconductor/onsemiH11B255VMAMI Semiconductor/onsemiH11C1SDonsemiOPTOISOLATOR 5.3KV SCR 6SMDH11C2SDonsemiOPTOISOLATOR 5.3KV SCR 6SMDH11B815300onsemiOPTOISOLATOR 5KV DARLINGTON 4DIPH11B255SR2MAMI Semiconductor/onsemiH11C4SDonsemiOPTOISOLATOR 5.3KV SCR 6SMDH11C5SDonsemiOPTOISOLATOR 5.3KV SCR 6SMD
H11BX4788Fairchild (onsemi)H11BD6XFairchild (onsemi)H11B815SDonsemiOPTOISOLATOR 5KV DARLINGTON 4SMDH11B255SMAMI Semiconductor/onsemiH11B2SMAMI Semiconductor/onsemiH11B3SR2MAMI Semiconductor/onsemiH11C3SDonsemiOPTOISOLATOR 5.3KV SCR 6SMDH11B3SMAMI Semiconductor/onsemiH11B2SR2MFairchild (onsemi)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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