GBPC12005W Tech Spezifikatioune
onsemi - GBPC12005W technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - GBPC12005W
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Peak Reverse (Max) | 50 V | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 6 A | |
| Technologie | Standard | |
| Supplier Device Package | GBPC-W | |
| Serie | - | |
| Package / Case | 4-Square, GBPC-W |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Diode Type | Single Phase | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 50 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 12 A | |
| Basis Produktnummer | GBPC12 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi GBPC12005W.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | GBPC12005W | GBP410 | GBPC102-E4/51 | GBPC12005 |
| Hiersteller | onsemi | Yangzhou Yangjie Electronic Technology Co.,Ltd | Vishay General Semiconductor - Diodes Division | onsemi |
| Serie | - | - | - | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | QC Terminal |
| Voltage - Peak Reverse (Max) | 50 V | 1 kV | 200 V | 50 V |
| Basis Produktnummer | GBPC12 | - | GBPC102 | GBPC12 |
| Technologie | Standard | Standard | Standard | Standard |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 12 A | 4 A | 2 A | 12 A |
| Supplier Device Package | GBPC-W | GBP | GBPC1 | GBPC |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 6 A | 1 V @ 2 A | 1 V @ 1.5 A | 1.1 V @ 6 A |
| Package / Case | 4-Square, GBPC-W | 4-ESIP, GBP | 4-Square, GBPC-1 | 4-Square, GBPC |
| Diode Type | Single Phase | Single Phase | Single Phase | Single Phase |
| Package protegéieren | Bulk | Tube | Box | Bulk |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 50 V | 5 µA @ 1000 V | 5 µA @ 200 V | 5 µA @ 50 V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Eroflueden GBPC12005W PDF DataDhusts an onsemi Dokumentatioun fir GBPC12005W - onsemi.
GBP410Yangzhou Yangjie Electronic Technology Co.,LtdRECT BRIDGE 1000V 4A GBPGBPC102-E4/51Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1PHASE 200V 2A GBPC1
GBP408_HFLITEONGBPC12005onsemiBRIDGE RECT 1PHASE 50V 12A GBPC
GBPC1506WGeneSiC SemiconductorBRIDGE RECT 1P 600V 15A GBPC-WGBP408N_HFLITEONGBPC1206onsemiBRIDGE RECT 1PHASE 600V 12A GBPC
GBP410Diodes IncorporatedMEDIUM/HIGH POWER BRIDGE GBP TUBGBP408-HFLITEONGBPC1501onsemiBRIDGE RECT 1PHASE 100V 15A GBPCGBPC1206Fairchild SemiconductorBRIDGE RECTIFIER DIODE, 1 PHASE,
GBPC15005W-E4/51Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1P 50V 15A GBPC-WGBPC1208W-E4/51Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1P 800V 12A GBPC-W
GBPC1506-E4/51Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1PHASE 600V 15A GBPCGBPC12005Fairchild SemiconductorBRIDGE RECTIFIER DIODE, 1 PHASE,
GBP410HY Electronic (Cayman) LimitedGLASS PASSIVATED BRIDGE RECTIFIE
GBPC1501Diodes IncorporatedBRIDGE RECT 1PHASE 100V 15A GBPCGBPC12005WFairchild SemiconductorBRIDGE RECTIFIER DIODE| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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