FW276-TL-2H Tech Spezifikatioune
onsemi - FW276-TL-2H technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FW276-TL-2H
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 4.5V @ 1mA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SOIC | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 12.1Ohm @ 350mA, 10V | |
| Power - Max | 1.6W | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 55pF @ 20V | |
| Gate Charge (Qg) (Max) @ Vgs | 3.7nC @ 10V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 450V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 700mA | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | FW276 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FW276-TL-2H.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | FW276-TL-2H | FW276-TL-2H | FW297-TL-2W | FW257-TL-E |
| Hiersteller | onsemi | Fairchild Semiconductor | onsemi | Sanyo |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | - |
| Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) | - |
| Input Capacitance (Ciss) (Max) @ Vds | 55pF @ 20V | 55pF @ 20V | 750pF @ 20V | - |
| Serie | - | - | - | * |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 700mA | 700mA (Tc) | 4.5A | - |
| Vgs (th) (Max) @ Id | 4.5V @ 1mA | 4.5V @ 1mA | 2.6V @ 1mA | - |
| FET Feature | Logic Level Gate | Logic Level Gate, 10V Drive | Logic Level Gate, 4V Drive | - |
| Entworf fir Source Voltage (Vdss) | 450V | 450V | 60V | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Rds On (Max) @ Id, Vgs | 12.1Ohm @ 350mA, 10V | 12.1Ohm @ 350mA, 10V | 58mOhm @ 4.5A, 10V | - |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | - |
| Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Bulk |
| Gate Charge (Qg) (Max) @ Vgs | 3.7nC @ 10V | 3.7nC @ 10V | 14nC @ 10V | - |
| Basis Produktnummer | FW276 | FW276 | FW297 | FW257 |
| Power - Max | 1.6W | 1.6W (Tc) | 1.8W | - |
Eroflueden FW276-TL-2H PDF DataDhusts an onsemi Dokumentatioun fir FW276-TL-2H - onsemi.
FW2520-470K-R-T1-LFFW276-TL-2HFairchild SemiconductorPOWER FIELD-EFFECT TRANSISTORFW250R1-18LUCENTIGBT ModuleFW261-TL-EonsemiNCH+NCH 4V DRIVE SERIESFW252018-101K-R-T1-LFFW26025AISKSFW297-TL-2WonsemiMOSFET 2N-CH 60V 4.5A 8SOICFW257-TL-ESanyoN-CHANNEL MOSFETFW297-TL-2W MOSAMI Semiconductor/onsemi
FW252S-A06ARenesas Electronics Corporation
FW2600018Diodes IncorporatedCRYSTAL 26.0000MHZ 9PF SMDFW250R1-S18LUCENTIGBT ModuleFW252018-470J-R-T2-LFFW256-TL-ESanyoN-CHANNEL SILICON MOSFETFW252018-560K-RFW256-TLAMI Semiconductor/onsemi
FW26025A1STMicroelectronicsFW26025SPTECH| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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