FQU8P10TU Tech Spezifikatioune
onsemi - FQU8P10TU technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FQU8P10TU
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | I-PAK | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 530mOhm @ 3.3A, 10V | |
Power Dissipation (Max) | 2.5W (Ta), 44W (Tc) | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.6A (Tc) | |
Basis Produktnummer | FQU8P10 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FQU8P10TU.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQU8P10TU | FQU7N20TU | FQU6N50CTU | FQU6N40CTU |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V | 10 nC @ 10 V | 25 nC @ 10 V | 20 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 25 V | 400 pF @ 25 V | 700 pF @ 25 V | 625 pF @ 25 V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 5V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
Serie | QFET® | QFET® | QFET® | QFET® |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.6A (Tc) | 5.3A (Tc) | 4.5A (Tc) | 4.5A (Tc) |
Package protegéieren | Tube | Tube | Tube | Tube |
Rds On (Max) @ Id, Vgs | 530mOhm @ 3.3A, 10V | 690mOhm @ 2.65A, 10V | 1.2Ohm @ 2.25A, 10V | 1Ohm @ 2.25A, 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Supplier Device Package | I-PAK | I-PAK | I-PAK | I-PAK |
Power Dissipation (Max) | 2.5W (Ta), 44W (Tc) | 2.5W (Ta), 45W (Tc) | 2.5W (Ta), 61W (Tc) | 2.5W (Ta), 48W (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Basis Produktnummer | FQU8P10 | FQU7 | FQU6 | FQU6 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 100 V | 200 V | 500 V | 400 V |
FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
FET Feature | - | - | - | - |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
Eroflueden FQU8P10TU PDF DataDhusts an onsemi Dokumentatioun fir FQU8P10TU - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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