FQU13N06LTU Tech Spezifikatioune
onsemi - FQU13N06LTU technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FQU13N06LTU
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | I-PAK | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 115mOhm @ 5.5A, 10V | |
Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Tc) | |
Basis Produktnummer | FQU13N06 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FQU13N06LTU.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQU13N06LTU | FQU13N06LTU | FQU13N10LTU | FQU12N20TU |
Hiersteller | onsemi | Fairchild Semiconductor | onsemi | Fairchild Semiconductor |
Supplier Device Package | I-PAK | I-PAK | I-PAK | I-PAK |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Package protegéieren | Tube | Bulk | Tube | Bulk |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
Vgs (Max) | ±20V | ±20V | ±20V | ±30V |
Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) | 2.5W (Ta), 28W (Tc) | 2.5W (Ta), 40W (Tc) | 2.5W (Ta), 55W (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 100 V | 200 V |
Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | 5V, 10V | 5V, 10V | 10V |
FET Feature | - | - | - | - |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA | 2V @ 250µA | 5V @ 250µA |
Serie | QFET® | QFET® | QFET® | QFET® |
Rds On (Max) @ Id, Vgs | 115mOhm @ 5.5A, 10V | 115mOhm @ 5.5A, 10V | 180mOhm @ 5A, 10V | 280mOhm @ 4.5A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V | 350 pF @ 25 V | 520 pF @ 25 V | 910 pF @ 25 V |
Basis Produktnummer | FQU13N06 | - | FQU13N10 | - |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Tc) | 11A (Tc) | 10A (Tc) | 9A (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 5 V | 6.4 nC @ 5 V | 12 nC @ 5 V | 23 nC @ 10 V |
Eroflueden FQU13N06LTU PDF DataDhusts an onsemi Dokumentatioun fir FQU13N06LTU - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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