FQPF7N80C Tech Spezifikatioune
onsemi - FQPF7N80C technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FQPF7N80C
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 5V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220F-3 | |
| Serie | QFET® | |
| Rds On (Max) @ Id, Vgs | 1.9Ohm @ 3.3A, 10V | |
| Power Dissipation (Max) | 56W (Tc) | |
| Package / Case | TO-220-3 Full Pack | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 800 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.6A (Tc) | |
| Basis Produktnummer | FQPF7 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FQPF7N80C.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | FQPF7N80C | FQPF7N60 | FQPF7N65C | FQPF7N80 |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Basis Produktnummer | FQPF7 | FQPF7 | FQPF7 | FQPF7 |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | 38 nC @ 10 V | 36 nC @ 10 V | 52 nC @ 10 V |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Supplier Device Package | TO-220F-3 | TO-220F-3 | TO-220F-3 | TO-220F-3 |
| Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 25 V | 1430 pF @ 25 V | 1245 pF @ 25 V | 1850 pF @ 25 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.6A (Tc) | 4.3A (Tc) | 7A (Tc) | 3.8A (Tc) |
| Vgs (th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 4V @ 250µA | 5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 1.9Ohm @ 3.3A, 10V | 1Ohm @ 2.2A, 10V | 1.4Ohm @ 3.5A, 10V | 1.5Ohm @ 1.9A, 10V |
| Entworf fir Source Voltage (Vdss) | 800 V | 600 V | 650 V | 800 V |
| Power Dissipation (Max) | 56W (Tc) | 48W (Tc) | 52W (Tc) | 56W (Tc) |
| Serie | QFET® | QFET® | - | QFET® |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| FET Feature | - | - | - | - |
Eroflueden FQPF7N80C PDF DataDhusts an onsemi Dokumentatioun fir FQPF7N80C - onsemi.
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FQPF7N90FCFQPF7N60CFairchild (onsemi)FQPF7P06onsemiMOSFET P-CH 60V 5.3A TO220FFQPF7N80CFairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 6FQPF7N65VBSEMIFQPF85N06Fairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 5FQPF7N60Fairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 4FQPF7P20onsemiMOSFET P-CH 200V 5.2A TO220FFQPF7P06Fairchild SemiconductorMOSFET P-CH 60V 5.3A TO220FFQPF7N65CFairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 7FQPF7N80C MOSFairchild (onsemi)FQPF7P06 MOSFairchild (onsemi)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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