FQP85N06 Tech Spezifikatioune
onsemi - FQP85N06 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FQP85N06
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±25V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | QFET® | |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 42.5A, 10V | |
| Power Dissipation (Max) | 160W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 4120 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 112 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 85A (Tc) | |
| Basis Produktnummer | FQP85 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FQP85N06.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | FQP85N06 | FQP7P06 | FQP7P20 | FQP8N60C |
| Hiersteller | onsemi | Fairchild Semiconductor | Fairchild Semiconductor | onsemi |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 5V @ 250µA | 4V @ 250µA |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Basis Produktnummer | FQP85 | - | - | FQP8 |
| Power Dissipation (Max) | 160W (Tc) | 45W (Tc) | 90W (Tc) | 147W (Tc) |
| Vgs (Max) | ±25V | ±25V | ±30V | ±30V |
| Package protegéieren | Tube | Bulk | Tube | Tube |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 42.5A, 10V | 410mOhm @ 3.5A, 10V | 690mOhm @ 3.65A, 10V | 1.2Ohm @ 3.75A, 10V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 85A (Tc) | 7A (Tc) | 7.3A (Tc) | 7.5A (Tc) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Input Capacitance (Ciss) (Max) @ Vds | 4120 pF @ 25 V | 295 pF @ 25 V | 770 pF @ 25 V | 1255 pF @ 25 V |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Gate Charge (Qg) (Max) @ Vgs | 112 nC @ 10 V | 8.2 nC @ 10 V | 25 nC @ 10 V | 36 nC @ 10 V |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 200 V | 600 V |
| Serie | QFET® | QFET® | QFET® | QFET® |
| FET Feature | - | - | - | - |
| FET Typ | N-Channel | P-Channel | P-Channel | N-Channel |
Eroflueden FQP85N06 PDF DataDhusts an onsemi Dokumentatioun fir FQP85N06 - onsemi.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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