FQP70N10 Tech Spezifikatioune
onsemi - FQP70N10 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FQP70N10
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220-3 | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 23mOhm @ 28.5A, 10V | |
Power Dissipation (Max) | 160W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 57A (Tc) | |
Basis Produktnummer | FQP70 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FQP70N10.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQP70N10 | FQP70N10 | FQP70N08 | FQP7N65C |
Hiersteller | onsemi | Fairchild Semiconductor | Fairchild Semiconductor | onsemi |
Package protegéieren | Tube | Bulk | Tube | Tube |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 57A (Tc) | 57A (Tc) | 70A (Tc) | 7A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 25 V | 3300 pF @ 25 V | 2700 pF @ 25 V | 1245 pF @ 25 V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Rds On (Max) @ Id, Vgs | 23mOhm @ 28.5A, 10V | 23mOhm @ 28.5A, 10V | 17mOhm @ 35A, 10V | 1.4Ohm @ 3.5A, 10V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V | 110 nC @ 10 V | 98 nC @ 10 V | 36 nC @ 10 V |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 80 V | 650 V |
FET Feature | - | - | - | - |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Serie | QFET® | QFET® | QFET® | QFET® |
Vgs (Max) | ±25V | ±25V | ±25V | ±30V |
Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Basis Produktnummer | FQP70 | - | - | FQP7 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Power Dissipation (Max) | 160W (Tc) | 160W (Tc) | 155W (Tc) | 160W (Tc) |
Eroflueden FQP70N10 PDF DataDhusts an onsemi Dokumentatioun fir FQP70N10 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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