FQP5P20 Tech Spezifikatioune
onsemi - FQP5P20 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FQP5P20
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 5V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | QFET® | |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2.4A, 10V | |
| Power Dissipation (Max) | 75W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 200 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.8A (Tc) | |
| Basis Produktnummer | FQP5 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FQP5P20.
| Produktiounsattriff |  |
|
|
 |
|---|---|---|---|---|
| Part Number | FQP5P20 | FQP5N90 | FQP5P10 | FQP5P20 |
| Hiersteller | onsemi | onsemi | onsemi | Fairchild Semiconductor |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.8A (Tc) | 5.4A (Tc) | 4.5A (Tc) | 4.8A (Tc) |
| Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| FET Typ | P-Channel | N-Channel | P-Channel | P-Channel |
| Entworf fir Source Voltage (Vdss) | 200 V | 900 V | 100 V | 200 V |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2.4A, 10V | 2.3Ohm @ 2.7A, 10V | 1.05Ohm @ 2.25A, 10V | 1.4Ohm @ 2.4A, 10V |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Basis Produktnummer | FQP5 | FQP5 | FQP5 | - |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 25 V | 1550 pF @ 25 V | 250 pF @ 25 V | 430 pF @ 25 V |
| Vgs (th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 4V @ 250µA | 5V @ 250µA |
| Serie | QFET® | QFET® | QFET® | QFET® |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V | 40 nC @ 10 V | 8.2 nC @ 10 V | 13 nC @ 10 V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Power Dissipation (Max) | 75W (Tc) | 158W (Tc) | 40W (Tc) | 75W (Tc) |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
| Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| FET Feature | - | - | - | - |
Eroflueden FQP5P20 PDF DataDhusts an onsemi Dokumentatioun fir FQP5P20 - onsemi.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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