FQP12N60 Tech Spezifikatioune
onsemi - FQP12N60 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FQP12N60
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220-3 | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 700mOhm @ 5.3A, 10V | |
Power Dissipation (Max) | 180W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10.5A (Tc) | |
Basis Produktnummer | FQP1 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FQP12N60.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQP12N60 | FQP11N50CF | FQP12N60 | FQP13N06L |
Hiersteller | onsemi | Fairchild Semiconductor | Fairchild Semiconductor | onsemi |
Serie | QFET® | FRFET® | QFET® | QFET® |
Basis Produktnummer | FQP1 | - | - | FQP13 |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Vgs (th) (Max) @ Id | 5V @ 250µA | 4V @ 250µA | 5V @ 250µA | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V | 55 nC @ 10 V | 54 nC @ 10 V | 6.4 nC @ 5 V |
Rds On (Max) @ Id, Vgs | 700mOhm @ 5.3A, 10V | 550mOhm @ 5.5A, 10V | 700mOhm @ 5.3A, 10V | 110mOhm @ 6.8A, 10V |
Vgs (Max) | ±30V | ±30V | ±30V | ±20V |
Package protegéieren | Tube | Tube | Tube | Tube |
Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V | 2055 pF @ 25 V | 1900 pF @ 25 V | 350 pF @ 25 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10.5A (Tc) | 11A (Tc) | 10.5A (Tc) | 13.6A (Tc) |
Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Power Dissipation (Max) | 180W (Tc) | 195W (Tc) | 180W (Tc) | 45W (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 5V, 10V |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Entworf fir Source Voltage (Vdss) | 600 V | 500 V | 600 V | 60 V |
Eroflueden FQP12N60 PDF DataDhusts an onsemi Dokumentatioun fir FQP12N60 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.