FQP11N40 Tech Spezifikatioune
onsemi - FQP11N40 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FQP11N40
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220-3 | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 480mOhm @ 5.7A, 10V | |
Power Dissipation (Max) | 147W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 400 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11.4A (Tc) | |
Basis Produktnummer | FQP1 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FQP11N40.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQP11N40 | FQP11P06 | FQP11N40 | FQP10N60C |
Hiersteller | onsemi | onsemi | Fairchild Semiconductor | Fairchild Semiconductor |
Vgs (th) (Max) @ Id | 5V @ 250µA | 4V @ 250µA | 5V @ 250µA | 4V @ 250µA |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs | 480mOhm @ 5.7A, 10V | 175mOhm @ 5.7A, 10V | 480mOhm @ 5.7A, 10V | 730mOhm @ 4.75A, 10V |
Supplier Device Package | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Entworf fir Source Voltage (Vdss) | 400 V | 60 V | 400 V | 600 V |
Package protegéieren | Tube | Tube | Tube | Tube |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Power Dissipation (Max) | 147W (Tc) | 53W (Tc) | 147W (Tc) | 156W (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V | 550 pF @ 25 V | 1400 pF @ 25 V | 2040 pF @ 25 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11.4A (Tc) | 11.4A (Tc) | 11.4A (Tc) | 9.5A (Tc) |
FET Feature | - | - | - | - |
FET Typ | N-Channel | P-Channel | N-Channel | N-Channel |
Vgs (Max) | ±30V | ±25V | ±30V | ±30V |
Serie | QFET® | QFET® | QFET® | QFET® |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Basis Produktnummer | FQP1 | FQP11 | - | - |
Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | 17 nC @ 10 V | 35 nC @ 10 V | 57 nC @ 10 V |
Eroflueden FQP11N40 PDF DataDhusts an onsemi Dokumentatioun fir FQP11N40 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
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Oceania | Australien | 6 |
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Asien | Indien | 4 |
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Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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