FQI9N50CTU Tech Spezifikatioune
onsemi - FQI9N50CTU technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FQI9N50CTU
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | I2PAK (TO-262) | |
| Serie | QFET® | |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 4.5A, 10V | |
| Power Dissipation (Max) | 135W (Tc) | |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1030 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 500 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9A (Tc) | |
| Basis Produktnummer | FQI9 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FQI9N50CTU.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | FQI9N50CTU | FQI9N50CTU | FQI7N80TU | FQI7N60TU |
| Hiersteller | onsemi | Fairchild Semiconductor | Fairchild Semiconductor | onsemi |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 4.5A, 10V | 800mOhm @ 4.5A, 10V | 1.5Ohm @ 3.3A, 10V | 1Ohm @ 3.7A, 10V |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 5V @ 250µA | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | 35 nC @ 10 V | 52 nC @ 10 V | 38 nC @ 10 V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Basis Produktnummer | FQI9 | - | - | FQI7N60 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| FET Feature | - | - | - | - |
| Entworf fir Source Voltage (Vdss) | 500 V | 500 V | 800 V | 600 V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 1030 pF @ 25 V | 1030 pF @ 25 V | 1850 pF @ 25 V | 1430 pF @ 25 V |
| Supplier Device Package | I2PAK (TO-262) | I2PAK (TO-262) | I2PAK (TO-262) | I2PAK (TO-262) |
| Package protegéieren | Tube | Tube | Bulk | Tube |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Power Dissipation (Max) | 135W (Tc) | 135W (Tc) | 3.13W (Ta), 167W (Tc) | 3.13W (Ta), 142W (Tc) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9A (Tc) | 9A (Tc) | 6.6A (Tc) | 7.4A (Tc) |
| Serie | QFET® | QFET® | QFET® | QFET® |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Eroflueden FQI9N50CTU PDF DataDhusts an onsemi Dokumentatioun fir FQI9N50CTU - onsemi.
FQI9N50CTUFairchild SemiconductorMOSFET N-CH 500V 9A I2PAKFQI7P20TU MOSFairchild (onsemi)FQI7N80TUFairchild SemiconductorMOSFET N-CH 800V 6.6A I2PAKFQI7N60TUonsemiMOSFET N-CH 600V 7.4A I2PAKFQI9P25Fairchild (onsemi)FQI8N60CTUFairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 7FQI7N80TUonsemiMOSFET N-CH 800V 6.6A I2PAKFQI9N30TUFSCFQI7P20TUFSCFQI9N50CFairchild (onsemi)FQI8N25TUFSCFQI8N60CFairchild (onsemi)FQI7N80Fairchild (onsemi)FQI8N60CTUonsemiMOSFET N-CH 600V 7.5A I2PAKFQI7N60TUFairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 7FQI8N60Fairchild (onsemi)FQI9N30Fairchild (onsemi)FQI95N03LTUFSC| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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