FQD9N25TF Tech Spezifikatioune
onsemi - FQD9N25TF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FQD9N25TF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-252AA | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 420mOhm @ 3.7A, 10V | |
Power Dissipation (Max) | 2.5W (Ta), 55W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 250 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.4A (Tc) | |
Basis Produktnummer | FQD9 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FQD9N25TF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQD9N25TF | FQD8N25TF | FQD8P10TM | FQD8N25TF |
Hiersteller | onsemi | Fairchild Semiconductor | Fairchild Semiconductor | onsemi |
FET Feature | - | - | - | - |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Entworf fir Source Voltage (Vdss) | 250 V | 250 V | 100 V | 250 V |
Power Dissipation (Max) | 2.5W (Ta), 55W (Tc) | 2.5W (Ta), 50W (Tc) | 2.5W (Ta), 44W (Tc) | 2.5W (Ta), 50W (Tc) |
Rds On (Max) @ Id, Vgs | 420mOhm @ 3.7A, 10V | 550mOhm @ 3.1A, 10V | 530mOhm @ 3.3A, 10V | 550mOhm @ 3.1A, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Serie | QFET® | QFET® | QFET® | QFET® |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.4A (Tc) | 6.2A (Tc) | 6.6A (Tc) | 6.2A (Tc) |
Package protegéieren | Tape & Reel (TR) | Bulk | Bulk | Tape & Reel (TR) |
Basis Produktnummer | FQD9 | - | - | FQD8 |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Typ | N-Channel | N-Channel | P-Channel | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V | 530 pF @ 25 V | 470 pF @ 25 V | 530 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | 15 nC @ 10 V | 15 nC @ 10 V | 15 nC @ 10 V |
Supplier Device Package | TO-252AA | TO-252, (D-Pak) | TO-252, (D-Pak) | TO-252AA |
Vgs (th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 4V @ 250µA | 5V @ 250µA |
Eroflueden FQD9N25TF PDF DataDhusts an onsemi Dokumentatioun fir FQD9N25TF - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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