FQD7N10LTM Tech Spezifikatioune
onsemi - FQD7N10LTM technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FQD7N10LTM
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 2V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-252AA | |
| Serie | QFET® | |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 2.9A, 10V | |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.8A (Tc) | |
| Basis Produktnummer | FQD7N10 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FQD7N10LTM.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | FQD7N10LTM | FQD6P25TM | FQD7N10LTM | FQD7N10TM |
| Hiersteller | onsemi | onsemi | Fairchild Semiconductor | Fairchild Semiconductor |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 2.9A, 10V | 1.1Ohm @ 2.35A, 10V | 350mOhm @ 2.9A, 10V | 350mOhm @ 2.9A, 10V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Bulk |
| Basis Produktnummer | FQD7N10 | FQD6 | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 5 V | 27 nC @ 10 V | 6 nC @ 5 V | 7.5 nC @ 10 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 25 V | 780 pF @ 25 V | 290 pF @ 25 V | 250 pF @ 25 V |
| FET Typ | N-Channel | P-Channel | N-Channel | N-Channel |
| Serie | QFET® | QFET® | QFET® | QFET® |
| Entworf fir Source Voltage (Vdss) | 100 V | 250 V | 100 V | 100 V |
| Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | 10V | 5V, 10V | 10V |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) | 2.5W (Ta), 55W (Tc) | 2.5W (Ta), 25W (Tc) | 2.5W (Ta), 25W (Tc) |
| FET Feature | - | - | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.8A (Tc) | 4.7A (Tc) | 5.8A (Tc) | 5.8A (Tc) |
| Vgs (Max) | ±20V | ±30V | ±20V | ±25V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252AA | TO-252AA | TO-252, (D-Pak) | TO-252, (D-Pak) |
| Vgs (th) (Max) @ Id | 2V @ 250µA | 5V @ 250µA | 2V @ 250µA | 4V @ 250µA |
Eroflueden FQD7N10LTM PDF DataDhusts an onsemi Dokumentatioun fir FQD7N10LTM - onsemi.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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