FQD5P20TF Tech Spezifikatioune
onsemi - FQD5P20TF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FQD5P20TF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-252AA | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1.85A, 10V | |
Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 200 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.7A (Tc) | |
Basis Produktnummer | FQD5 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FQD5P20TF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQD5P20TF | FQD5P20TM | FQD630TM | FQD5P10TF |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Supplier Device Package | TO-252AA | TO-252AA | TO-252AA | TO-252AA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.7A (Tc) | 3.7A (Tc) | 7A (Tc) | 3.6A (Tc) |
Serie | QFET® | QFET® | QFET® | QFET® |
Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1.85A, 10V | 1.4Ohm @ 1.85A, 10V | 400mOhm @ 3.5A, 10V | 1.05Ohm @ 1.8A, 10V |
FET Typ | P-Channel | P-Channel | N-Channel | P-Channel |
Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V | 13 nC @ 10 V | 25 nC @ 10 V | 8.2 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 25 V | 430 pF @ 25 V | 550 pF @ 25 V | 250 pF @ 25 V |
Basis Produktnummer | FQD5 | FQD5P20 | FQD6 | FQD5 |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Vgs (th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) | 2.5W (Ta), 45W (Tc) | 2.5W (Ta), 46W (Tc) | 2.5W (Ta), 25W (Tc) |
Entworf fir Source Voltage (Vdss) | 200 V | 200 V | 200 V | 100 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Vgs (Max) | ±30V | ±30V | ±25V | ±30V |
FET Feature | - | - | - | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Eroflueden FQD5P20TF PDF DataDhusts an onsemi Dokumentatioun fir FQD5P20TF - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.