FQD17P06TM Tech Spezifikatioune
onsemi - FQD17P06TM technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FQD17P06TM
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-252AA | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 135mOhm @ 6A, 10V | |
Power Dissipation (Max) | 2.5W (Ta), 44W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Tc) | |
Basis Produktnummer | FQD17P06 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FQD17P06TM.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQD17P06TM | FQD19N10LTF | FQD17N08LTF | FQD19N10LTF |
Hiersteller | onsemi | onsemi | onsemi | Fairchild Semiconductor |
FET Feature | - | - | - | - |
Power Dissipation (Max) | 2.5W (Ta), 44W (Tc) | 2.5W (Ta), 50W (Tc) | 2.5W (Ta), 40W (Tc) | 2.5W (Ta), 50W (Tc) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 2V @ 250µA | 2V @ 250µA | 2V @ 250µA |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Bulk |
Rds On (Max) @ Id, Vgs | 135mOhm @ 6A, 10V | 100mOhm @ 7.8A, 10V | 100mOhm @ 6.45A, 10V | 100mOhm @ 7.8A, 10V |
FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
Basis Produktnummer | FQD17P06 | FQD1 | FQD1 | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 5V, 10V | 5V, 10V | 5V, 10V |
Vgs (Max) | ±25V | ±20V | ±20V | ±20V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Tc) | 15.6A (Tc) | 12.9A (Tc) | 15.6A (Tc) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V | 870 pF @ 25 V | 520 pF @ 25 V | 870 pF @ 25 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Entworf fir Source Voltage (Vdss) | 60 V | 100 V | 80 V | 100 V |
Serie | QFET® | QFET® | QFET® | QFET® |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V | 18 nC @ 5 V | 11.5 nC @ 5 V | 18 nC @ 5 V |
Supplier Device Package | TO-252AA | TO-252AA | D-Pak | TO-252, (D-Pak) |
Eroflueden FQD17P06TM PDF DataDhusts an onsemi Dokumentatioun fir FQD17P06TM - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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