FQB4N80TM Tech Spezifikatioune
onsemi - FQB4N80TM technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FQB4N80TM
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D²PAK (TO-263) | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1.95A, 10V | |
Power Dissipation (Max) | 3.13W (Ta), 130W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 800 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.9A (Tc) | |
Basis Produktnummer | FQB4N80 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FQB4N80TM.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQB4N80TM | FQB4P25TM | FQB47P06TM-AM002 | FQB4N90TM |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1.95A, 10V | 2.1Ohm @ 2A, 10V | 26mOhm @ 23.5A, 10V | 3.3Ohm @ 2.1A, 10V |
FET Feature | - | - | - | - |
Power Dissipation (Max) | 3.13W (Ta), 130W (Tc) | 3.13W (Ta), 75W (Tc) | 3.75W (Ta), 160W (Tc) | 3.13W (Ta), 140W (Tc) |
Entworf fir Source Voltage (Vdss) | 800 V | 250 V | 60 V | 900 V |
Supplier Device Package | D²PAK (TO-263) | D²PAK (TO-263) | D²PAK (TO-263) | D²PAK (TO-263) |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | 14 nC @ 10 V | 110 nC @ 10 V | 30 nC @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.9A (Tc) | 4A (Tc) | 47A (Tc) | 4.2A (Tc) |
Vgs (Max) | ±30V | ±30V | ±25V | ±30V |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 25 V | 420 pF @ 25 V | 3600 pF @ 25 V | 1100 pF @ 25 V |
Basis Produktnummer | FQB4N80 | FQB4 | FQB47P06 | FQB4 |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Serie | QFET® | QFET® | QFET® | QFET® |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Typ | N-Channel | P-Channel | P-Channel | N-Channel |
Vgs (th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 4V @ 250µA | 5V @ 250µA |
Eroflueden FQB4N80TM PDF DataDhusts an onsemi Dokumentatioun fir FQB4N80TM - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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