FQB17P10TM Tech Spezifikatioune
onsemi - FQB17P10TM technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FQB17P10TM
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D²PAK (TO-263) | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 190mOhm @ 8.25A, 10V | |
Power Dissipation (Max) | 3.75W (Ta), 100W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16.5A (Tc) | |
Basis Produktnummer | FQB1 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FQB17P10TM.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQB17P10TM | FQB19N20CTM | FQB19N10TM | FQB16N25TM |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V | 1080 pF @ 25 V | 780 pF @ 25 V | 1200 pF @ 25 V |
Basis Produktnummer | FQB1 | FQB19N20 | FQB1 | FQB1 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Rds On (Max) @ Id, Vgs | 190mOhm @ 8.25A, 10V | 170mOhm @ 9.5A, 10V | 100mOhm @ 9.5A, 10V | 230mOhm @ 8A, 10V |
Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V | 53 nC @ 10 V | 25 nC @ 10 V | 35 nC @ 10 V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 5V @ 250µA |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
Vgs (Max) | ±30V | ±30V | ±25V | ±30V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Serie | QFET® | QFET® | QFET® | QFET® |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 100 V | 200 V | 100 V | 250 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Supplier Device Package | D²PAK (TO-263) | D²PAK (TO-263) | D²PAK (TO-263) | D²PAK (TO-263) |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Power Dissipation (Max) | 3.75W (Ta), 100W (Tc) | 3.13W (Ta), 139W (Tc) | 3.75W (Ta), 75W (Tc) | 3.13W (Ta), 142W (Tc) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16.5A (Tc) | 19A (Tc) | 19A (Tc) | 16A (Tc) |
Eroflueden FQB17P10TM PDF DataDhusts an onsemi Dokumentatioun fir FQB17P10TM - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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