FQB10N20CTM Tech Spezifikatioune
onsemi - FQB10N20CTM technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FQB10N20CTM
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D²PAK (TO-263) | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 360mOhm @ 4.75A, 10V | |
Power Dissipation (Max) | 72W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 200 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9.5A (Tc) | |
Basis Produktnummer | FQB1 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FQB10N20CTM.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQB10N20CTM | FQB11N40CTM | FQB10N20LTM | FQB11N40CTM |
Hiersteller | onsemi | Fairchild Semiconductor | onsemi | onsemi |
Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V | 35 nC @ 10 V | 17 nC @ 5 V | 35 nC @ 10 V |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | D²PAK (TO-263) | D2PAK (TO-263) | D²PAK (TO-263) | D²PAK (TO-263) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 2V @ 250µA | 4V @ 250µA |
FET Feature | - | - | - | - |
Rds On (Max) @ Id, Vgs | 360mOhm @ 4.75A, 10V | 530mOhm @ 5.25A, 10V | 360mOhm @ 5A, 10V | 530mOhm @ 5.25A, 10V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 200 V | 400 V | 200 V | 400 V |
Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V | 1090 pF @ 25 V | 830 pF @ 25 V | 1090 pF @ 25 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9.5A (Tc) | 10.5A (Tc) | 10A (Tc) | 10.5A (Tc) |
Power Dissipation (Max) | 72W (Tc) | 135W (Tc) | 3.13W (Ta), 87W (Tc) | 135W (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 5V, 10V | 10V |
Vgs (Max) | ±30V | ±30V | ±20V | ±30V |
Basis Produktnummer | FQB1 | - | FQB1 | FQB11N40 |
Serie | QFET® | QFET® | QFET® | QFET® |
Eroflueden FQB10N20CTM PDF DataDhusts an onsemi Dokumentatioun fir FQB10N20CTM - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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