FQAF7N90 Tech Spezifikatioune
onsemi - FQAF7N90 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FQAF7N90
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 5V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-3PF | |
| Serie | QFET® | |
| Rds On (Max) @ Id, Vgs | 1.55Ohm @ 2.6A, 10V | |
| Power Dissipation (Max) | 107W (Tc) | |
| Package / Case | TO-3P-3 Full Pack | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 2280 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 900 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.2A (Tc) | |
| Basis Produktnummer | FQAF7 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FQAF7N90.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | FQAF7N90 | FQAF65N06 | FQAF5N90 | FQAF40N25 |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Rds On (Max) @ Id, Vgs | 1.55Ohm @ 2.6A, 10V | 16mOhm @ 24.5A, 10V | 2.3Ohm @ 2.05A, 10V | 70mOhm @ 12A, 10V |
| Basis Produktnummer | FQAF7 | FQAF6 | FQAF5 | FQAF4 |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Vgs (Max) | ±30V | ±25V | ±30V | ±30V |
| Vgs (th) (Max) @ Id | 5V @ 250µA | 4V @ 250µA | 5V @ 250µA | 5V @ 250µA |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.2A (Tc) | 49A (Tc) | 4.1A (Tc) | 24A (Tc) |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Package / Case | TO-3P-3 Full Pack | TO-3P-3 Full Pack | TO-3P-3 Full Pack | TO-3P-3 Full Pack |
| Power Dissipation (Max) | 107W (Tc) | 86W (Tc) | 90W (Tc) | 108W (Tc) |
| Entworf fir Source Voltage (Vdss) | 900 V | 60 V | 900 V | 250 V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Serie | QFET® | QFET® | QFET® | QFET® |
| FET Feature | - | - | - | - |
| Supplier Device Package | TO-3PF | TO-3PF | TO-3PF | TO-3PF |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V | 65 nC @ 10 V | 40 nC @ 10 V | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2280 pF @ 25 V | 2410 pF @ 25 V | 1550 pF @ 25 V | 4000 pF @ 25 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Eroflueden FQAF7N90 PDF DataDhusts an onsemi Dokumentatioun fir FQAF7N90 - onsemi.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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