FQA65N06 Tech Spezifikatioune
onsemi - FQA65N06 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FQA65N06
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-3P | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 16mOhm @ 36A, 10V | |
Power Dissipation (Max) | 183W (Tc) | |
Package / Case | TO-3P-3, SC-65-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 2410 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 72A (Tc) | |
Basis Produktnummer | FQA6 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FQA65N06.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQA65N06 | FQA65N20 | FQA62N25C | FQA5N90 |
Hiersteller | onsemi | onsemi | onsemi | Fairchild Semiconductor |
Supplier Device Package | TO-3P | TO-3PN | TO-3PN | TO-3P |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Basis Produktnummer | FQA6 | FQA65 | FQA62 | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 72A (Tc) | 65A (Tc) | 62A (Tc) | 5.8A (Tc) |
Serie | QFET® | QFET® | QFET® | QFET® |
Input Capacitance (Ciss) (Max) @ Vds | 2410 pF @ 25 V | 7900 pF @ 25 V | 6280 pF @ 25 V | 1550 pF @ 25 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (Max) | ±25V | ±30V | ±30V | ±30V |
Power Dissipation (Max) | 183W (Tc) | 310W (Tc) | 298W (Tc) | 185W (Tc) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 5V @ 250µA | 4V @ 250µA | 5V @ 250µA |
Entworf fir Source Voltage (Vdss) | 60 V | 200 V | 250 V | 900 V |
Rds On (Max) @ Id, Vgs | 16mOhm @ 36A, 10V | 32mOhm @ 32.5A, 10V | 35mOhm @ 31A, 10V | 2.3Ohm @ 2.9A, 10V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V | 200 nC @ 10 V | 130 nC @ 10 V | 40 nC @ 10 V |
FET Feature | - | - | - | - |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Package / Case | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 |
Package protegéieren | Tube | Tube | Tube | Tube |
Eroflueden FQA65N06 PDF DataDhusts an onsemi Dokumentatioun fir FQA65N06 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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