FQA18N50V2 Tech Spezifikatioune
onsemi - FQA18N50V2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FQA18N50V2
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-3P | |
Serie | QFET® | |
Rds On (Max) @ Id, Vgs | 265mOhm @ 10A, 10V | |
Power Dissipation (Max) | 277W (Tc) | |
Package / Case | TO-3P-3, SC-65-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 3290 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 500 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc) | |
Basis Produktnummer | FQA1 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FQA18N50V2.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FQA18N50V2 | FQA20N40 | FQA170N06 | FQA18N50V2 |
Hiersteller | onsemi | onsemi | onsemi | Fairchild Semiconductor |
Power Dissipation (Max) | 277W (Tc) | 200W (Tc) | 375W (Tc) | 277W (Tc) |
Serie | QFET® | QFET® | QFET® | QFET® |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Vgs (Max) | ±30V | ±30V | ±25V | ±30V |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc) | 19.5A (Tc) | 170A (Tc) | 20A (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 4V @ 250µA | 5V @ 250µA |
Supplier Device Package | TO-3P | TO-3P | TO-3PN | TO-3P |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Basis Produktnummer | FQA1 | FQA2 | FQA170 | - |
Package / Case | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 |
Entworf fir Source Voltage (Vdss) | 500 V | 400 V | 60 V | 500 V |
Input Capacitance (Ciss) (Max) @ Vds | 3290 pF @ 25 V | 2800 pF @ 25 V | 9350 pF @ 25 V | 3290 pF @ 25 V |
Rds On (Max) @ Id, Vgs | 265mOhm @ 10A, 10V | 220mOhm @ 9.8A, 10V | 5.6mOhm @ 85A, 10V | 265mOhm @ 10A, 10V |
Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V | 75 nC @ 10 V | 290 nC @ 10 V | 55 nC @ 10 V |
Package protegéieren | Tube | Tube | Tube | Tube |
Eroflueden FQA18N50V2 PDF DataDhusts an onsemi Dokumentatioun fir FQA18N50V2 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? ARA AAA A WED : Mir kontaktéieren Iech direkt.