FJH1101 Tech Spezifikatioune
onsemi - FJH1101 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FJH1101
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 50 mA | |
| Voltage - DC Reverse (Vr) (Max) | 15 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-35 | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Serie | - | |
| Package / Case | DO-204AH, DO-35, Axial |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | 175°C (Max) | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 15 pA @ 15 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 150mA | |
| Capacitance @ Vr, F. | 2pF @ 0V, 1MHz | |
| Basis Produktnummer | FJH11 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FJH1101.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | FJH1101 | 1N2458 | A399D | SB560A-E3/54 |
| Hiersteller | onsemi | Microchip Technology | Powerex Inc. | Vishay General Semiconductor - Diodes Division |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 150mA | 70A | - | 5A |
| Mounting Type | Through Hole | Stud Mount | - | Through Hole |
| Basis Produktnummer | FJH11 | - | A399 | SB560 |
| Technologie | Standard | Standard | - | Schottky |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 50 mA | 1.25 V @ 200 A | - | 700 mV @ 5 A |
| Capacitance @ Vr, F. | 2pF @ 0V, 1MHz | - | - | - |
| Operatiounstemperatur - Junction | 175°C (Max) | -65°C ~ 200°C | - | -65°C ~ 150°C |
| Supplier Device Package | DO-35 | DO-5 (DO-203AB) | - | DO-201AD |
| Serie | - | - | - | - |
| Aktuell - Reverse Leakage @ Vr | 15 pA @ 15 V | 25 µA @ 50 V | - | 500 µA @ 60 V |
| Package / Case | DO-204AH, DO-35, Axial | DO-203AB, DO-5, Stud | - | DO-201AD, Axial |
| Speed | Small Signal =< 200mA (Io), Any Speed | Standard Recovery >500ns, > 200mA (Io) | - | Fast Recovery =< 500ns, > 200mA (Io) |
| Voltage - DC Reverse (Vr) (Max) | 15 V | 50 V | - | 60 V |
| Package protegéieren | Bulk | Bulk | Bulk | Tape & Reel (TR) |
Eroflueden FJH1101 PDF DataDhusts an onsemi Dokumentatioun fir FJH1101 - onsemi.
1N2458Microchip TechnologyDIODE GEN PURP 50V 70A DO5A399DPowerex Inc.DIODE FAST 400A 400V DO-200AASB560A-E3/54Vishay General Semiconductor - Diodes DivisionDIODE SCHOTTKY 60V 5A DO201ADR2180Microchip TechnologyRECTIFIER
V8P10-M3/87AVishay General Semiconductor - Diodes DivisionDIODE SCHOTTKY 100V 8A TO277A1N2258AMicrochip TechnologyDIODE GEN PURP 600V 22A DO4
MA27D300GLPanasonic Electronic ComponentsDIODE SCHOT 30V 100MA SSSMINI2
US1D_R1_00001Panjit International Inc.DIODE GEN PURP 200V 1A SMA
12F10Solid State Inc.DIODE GEN PURP 100V 12A DO4
SOD4004MDDDIODE GEN PURP 400V 1A SOD123FL
DSEP15-06BIXYSDIODE GEN PURP 600V 15A TO220AC
FJH1101Fairchild SemiconductorRECTIFIER DIODE, 0.15A, 20V, DO-VS-50WQ06FNTR-M3Vishay General Semiconductor - Diodes DivisionDIODE SCHOTTKY 60V 5.5A DPAK
S3KB-HFComchip TechnologyDIODE GP 800V 3A SMB/DO-214AA
SS16W_R1_00001Panjit International Inc.DIODE SCHOTTKY 60V 1A SMA1N3261RPowerex Inc.DIODE GP REV 100V 160A DO205AB120NQ035Vishay General Semiconductor - Diodes DivisionDIODE SCHOTTKY 35V 120A D-67
NRVB130T1GonsemiDIODE SCHOTTKY 30V 1A SOD123| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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