FGH30N6S2 Tech Spezifikatioune
onsemi - FGH30N6S2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FGH30N6S2
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Vce (on) (Max) @ Vge, Ic | 2.5V @ 15V, 12A | |
| Test Condition | 390V, 12A, 10Ohm, 15V | |
| Td (on / off) @ 25 ° C | 6ns/40ns | |
| Energie schalten | 55µJ (on), 100µJ (off) | |
| Supplier Device Package | TO-247-3 | |
| Serie | - | |
| Power - Max | 167 W | |
| Package / Case | TO-247-3 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tube | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Type | Standard | |
| IGBT Type | - | |
| Gate Charge | 23 nC | |
| Aktuell - Sammler Pulséiert (Icm) | 108 A | |
| Aktuell - Sammler (Ic) (Max) | 45 A | |
| Basis Produktnummer | FGH30 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FGH30N6S2.
| Produktiounsattriff |  |
 |
|
 |
|---|---|---|---|---|
| Part Number | FGH30N6S2 | FGH30S130P | FGH30N6S2D | FGH30N60LSDTU |
| Hiersteller | onsemi | onsemi | onsemi | Fairchild Semiconductor |
| Aktuell - Sammler (Ic) (Max) | 45 A | 60 A | 45 A | 60 A |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Input Type | Standard | Standard | Standard | Standard |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Package protegéieren | Tube | Tube | Tube | Bulk |
| Supplier Device Package | TO-247-3 | TO-247-3 | TO-247-3 | TO-247 |
| Power - Max | 167 W | 500 W | 167 W | 480 W |
| Basis Produktnummer | FGH30 | FGH30 | FGH30 | - |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | 1300 V | 600 V | 600 V |
| IGBT Type | - | Trench Field Stop | - | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Energie schalten | 55µJ (on), 100µJ (off) | - | 55µJ (on), 100µJ (off) | 1.1mJ (on), 21mJ (off) |
| Serie | - | - | - | - |
| Test Condition | 390V, 12A, 10Ohm, 15V | - | 390V, 12A, 10Ohm, 15V | 400V, 30A, 6.8Ohm, 15V |
| Td (on / off) @ 25 ° C | 6ns/40ns | - | 6ns/40ns | 18ns/250ns |
| Vce (on) (Max) @ Vge, Ic | 2.5V @ 15V, 12A | 2.3V @ 15V, 30A | 2.5V @ 15V, 12A | 1.4V @ 15V, 30A |
| Aktuell - Sammler Pulséiert (Icm) | 108 A | 90 A | 108 A | 90 A |
| Gate Charge | 23 nC | 78 nC | 23 nC | 225 nC |
Eroflueden FGH30N6S2 PDF DataDhusts an onsemi Dokumentatioun fir FGH30N6S2 - onsemi.
FGH30S130PonsemiIGBT 1300V 60A 500W TO-247ABFGH30N6S2DonsemiIGBT 600V 45A 167W TO247FGH40N60SFFairchild (onsemi)FGH30N60S2Fairchild (onsemi)FGH30T65UPDTFairchild (onsemi)FGH30N120FTDFairchild (onsemi)FGH30N60LSDTUFairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTOFGH30N120FTDTUFairchild SemiconductorN-CHANNEL IGBTFGH25T120SMD-F155onsemiIGBT 1200V 50A 428W TO247-3FGH30N60LSDFairchild (onsemi)FGH40N60SFDFairchild (onsemi)FGH30N6S2Fairchild SemiconductorN-CHANNEL IGBTFGH30N60LSDTUonsemiIGBT 600V 60A TO247-3FGH40N60AMI Semiconductor/onsemiFGH40N120ANFairchild (onsemi)FGH30S150PonsemiFGH30S150P - IGBT, 1500 V, 30 AFGH30N120FTDTUonsemiIGBT 1200V 60A 339W TO247FGH40N120ANTUonsemiIGBT NPT 1200V 64A TO247-3| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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