FFSH20120A Tech Spezifikatioune
onsemi - FFSH20120A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FFSH20120A
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.75 V @ 20 A | |
| Voltage - DC Reverse (Vr) (Max) | 1200 V | |
| Technologie | SiC (Silicon Carbide) Schottky | |
| Supplier Device Package | TO-247-2 | |
| Speed | No Recovery Time > 500mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 0 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-247-2 | |
| Package protegéieren | Tube | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 200 µA @ 1200 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 30A | |
| Capacitance @ Vr, F. | 1220pF @ 1V, 100KHz | |
| Basis Produktnummer | FFSH20120 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FFSH20120A.
| Produktiounsattriff |  |
 |
 |
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|---|---|---|---|---|
| Part Number | FFSH20120A | FFSD1065A | FFSD10120A | FFSH20120ADN-F155 |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Voltage - Viru (Vf) (Max) @ Wann | 1.75 V @ 20 A | 1.75 V @ 10 A | 1.75 V @ 10 A | 1.75 V @ 10 A |
| Basis Produktnummer | FFSH20120 | FFSD1065 | FFSD10120 | FFSH20120 |
| Aktuell - Reverse Leakage @ Vr | 200 µA @ 1200 V | 200 µA @ 650 V | 200 µA @ 1200 V | 200 µA @ 1200 V |
| Voltage - DC Reverse (Vr) (Max) | 1200 V | 650 V | 1200 V | 1200 V |
| Package / Case | TO-247-2 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-247-3 |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 30A | 18A | - | - |
| Speed | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Through Hole | Surface Mount | Surface Mount | Through Hole |
| Capacitance @ Vr, F. | 1220pF @ 1V, 100KHz | 575pF @ 1V, 100kHz | 612pF @ 1V, 100kHz | - |
| Serie | - | - | - | - |
| Reverse Recovery Time (trr) | 0 ns | 0 ns | 0 ns | - |
| Technologie | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
| Supplier Device Package | TO-247-2 | D-PAK (TO-252) | TO-252AA | TO-247-3 |
| Package protegéieren | Tube | Tape & Reel (TR) | Tape & Reel (TR) | Tube |
Eroflueden FFSH20120A PDF DataDhusts an onsemi Dokumentatioun fir FFSH20120A - onsemi.
FFSH20120ADN-F155onsemiDIODE SIC 1200V 10A TO247
FFSH30120ADNFairchild (onsemi)FFSH30120A-F155ONsemiFFSH15120ADN-F155ONsemiFFSH30120ADN-F155ONsemiFFSD0865BONsemiFFSH15120AONsemiFFSD08120AONsemiFFSH10120ADN-F155ONsemiFFSH2065ADN-F155ONsemiFFSH2065BDN-F085onsemi650V 20A SIC SBD GEN1.5FFSD1065AonsemiDIODE SIL CARBIDE 650V 18A DPAKFFSH10120ADNAMI Semiconductor/onsemiFFSH20120ADNAMI Semiconductor/onsemiFFSH2065AONsemiFFSH20120ADN-F155Fairchild SemiconductorRECTIFIER DIODE, SCHOTTKY, 1 PHAFFSD10120AonsemiDIODE SIL CARBIDE 1.2KV TO252AAFFSD1065BONsemi| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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