FDS7779Z Tech Spezifikatioune
onsemi - FDS7779Z technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDS7779Z
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 3V @ 250µA | |
| Vgs (Max) | ±25V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SOIC | |
| Serie | PowerTrench® | |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 16A, 10V | |
| Power Dissipation (Max) | 2.5W (Ta) | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 3800 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Ta) | |
| Basis Produktnummer | FDS77 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDS7779Z.
| Produktiounsattriff |  |
|
 |
|
|---|---|---|---|---|
| Part Number | FDS7779Z | FDS7764S | FDS7766S | FDS7766 |
| Hiersteller | onsemi | onsemi | Fairchild Semiconductor | Fairchild Semiconductor |
| Vgs (Max) | ±25V | ±16V | ±16V | ±16V |
| Vgs (th) (Max) @ Id | 3V @ 250µA | 2V @ 1mA | 3V @ 1mA | 3V @ 250µA |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Bulk |
| Input Capacitance (Ciss) (Max) @ Vds | 3800 pF @ 15 V | 2800 pF @ 15 V | 4785 pF @ 15 V | 4973 pF @ 15 V |
| Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| FET Feature | - | - | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Basis Produktnummer | FDS77 | FDS77 | - | - |
| Power Dissipation (Max) | 2.5W (Ta) | 2.5W (Ta) | 1W (Ta) | 1W (Ta) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Ta) | 13.5A (Ta) | 17A (Ta) | 17A (Ta) |
| FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V | 35 nC @ 5 V | 58 nC @ 5 V | 69 nC @ 5 V |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 16A, 10V | 7.5mOhm @ 13.5A, 10V | 5.5mOhm @ 17A, 10V | 5mOhm @ 17A, 10V |
| Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Eroflueden FDS7779Z PDF DataDhusts an onsemi Dokumentatioun fir FDS7779Z - onsemi.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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