FDS6930A Tech Spezifikatioune
onsemi - FDS6930A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDS6930A
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SOIC | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 40mOhm @ 5.5A, 10V | |
Power - Max | 900mW | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 15V | |
Gate Charge (Qg) (Max) @ Vgs | 7nC @ 5V | |
FET Feature | Logic Level Gate | |
Entworf fir Source Voltage (Vdss) | 30V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.5A | |
Konfiguratioun | 2 N-Channel (Dual) | |
Basis Produktnummer | FDS6930 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDS6930A.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDS6930A | FDS6930A | FDS6912A | FDS6912A |
Hiersteller | onsemi | Fairchild Semiconductor | onsemi | Fairchild Semiconductor |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.5A | 5.5A | 6A | 6A |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA |
Basis Produktnummer | FDS6930 | FDS6930 | FDS69 | FDS69 |
Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
Power - Max | 900mW | 900mW | 900mW | 900mW |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 30V | 30V | 30V | 30V |
Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Bulk |
Rds On (Max) @ Id, Vgs | 40mOhm @ 5.5A, 10V | 40mOhm @ 5.5A, 10V | 28mOhm @ 6A, 10V | 28mOhm @ 6A, 10V |
Gate Charge (Qg) (Max) @ Vgs | 7nC @ 5V | 7nC @ 5V | 8.1nC @ 5V | 8.1nC @ 5V |
FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 15V | 460pF @ 15V | 575pF @ 15V | 575pF @ 15V |
Eroflueden FDS6930A PDF DataDhusts an onsemi Dokumentatioun fir FDS6930A - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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