FDS6898AZ Tech Spezifikatioune
onsemi - FDS6898AZ technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDS6898AZ
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SOIC | |
| Serie | PowerTrench® | |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 9.4A, 4.5V | |
| Power - Max | 900mW | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1821pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 4.5V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 20V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9.4A | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | FDS6898 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDS6898AZ.
| Produktiounsattriff |  |
|
 |
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|---|---|---|---|---|
| Part Number | FDS6898AZ | FDS6900AS | FDS6900AS | FDS6898A |
| Hiersteller | onsemi | onsemi | Fairchild Semiconductor | onsemi |
| Input Capacitance (Ciss) (Max) @ Vds | 1821pF @ 10V | 600pF @ 15V | 600pF @ 15V | 1821pF @ 10V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
| Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
| Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9.4A | 6.9A, 8.2A | 6.9A, 8.2A | 9.4A |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 4.5V | 15nC @ 10V | 15nC @ 10V | 23nC @ 4.5V |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 9.4A, 4.5V | 27mOhm @ 6.9A, 10V | 27mOhm @ 6.9A, 10V | 14mOhm @ 9.4A, 4.5V |
| Serie | PowerTrench® | PowerTrench®, SyncFET™ | PowerTrench®, SyncFET™ | PowerTrench® |
| Power - Max | 900mW | 900mW | 900mW | 900mW |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | 3V @ 250µA | 3V @ 250µA | 1.5V @ 250µA |
| Entworf fir Source Voltage (Vdss) | 20V | 30V | 30V | 20V |
| Basis Produktnummer | FDS6898 | FDS69 | FDS69 | FDS6898 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden FDS6898AZ PDF DataDhusts an onsemi Dokumentatioun fir FDS6898AZ - onsemi.
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FDS6900AS MOSAMI Semiconductor/onsemiFDS6898AonsemiMOSFET 2N-CH 20V 9.4A 8SOIC| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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