FDS6688 Tech Spezifikatioune
onsemi - FDS6688 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDS6688
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SOIC | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 6mOhm @ 16A, 10V | |
Power Dissipation (Max) | 2.5W (Ta) | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 3888 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Ta) | |
Basis Produktnummer | FDS66 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDS6688.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDS6688 | FDS6685 | FDS6688AS | FDS6688S |
Hiersteller | onsemi | Fairchild Semiconductor | onsemi | Fairchild Semiconductor |
Rds On (Max) @ Id, Vgs | 6mOhm @ 16A, 10V | 20mOhm @ 8.8A, 10V | 6mOhm @ 14.5A, 10V | 6mOhm @ 16A, 10V |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Power Dissipation (Max) | 2.5W (Ta) | 2.5W (Ta) | 2.5W (Ta) | 2.5W (Ta) |
Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA | 3V @ 1mA |
Basis Produktnummer | FDS66 | - | FDS66 | - |
Input Capacitance (Ciss) (Max) @ Vds | 3888 pF @ 15 V | 1604 pF @ 15 V | 2510 pF @ 15 V | 3290 pF @ 15 V |
Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Bulk |
Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 5 V | 24 nC @ 5 V | 63 nC @ 10 V | 78 nC @ 10 V |
FET Typ | N-Channel | P-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Ta) | 8.8A (Ta) | 14.5A (Ta) | 16A (Ta) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
Vgs (Max) | ±20V | ±25V | ±20V | ±20V |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
Eroflueden FDS6688 PDF DataDhusts an onsemi Dokumentatioun fir FDS6688 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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