FDS3580 Tech Spezifikatioune
onsemi - FDS3580 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDS3580
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SOIC | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 29mOhm @ 7.6A, 10V | |
Power Dissipation (Max) | 2.5W (Ta) | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
Entworf fir Source Voltage (Vdss) | 80 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.6A (Ta) | |
Basis Produktnummer | FDS35 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDS3580.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDS3580 | FDS3570 | FDS3572 | FDS3572 |
Hiersteller | onsemi | onsemi | onsemi | Fairchild Semiconductor |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 6V, 10V | 6V, 10V | 6V, 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Rds On (Max) @ Id, Vgs | 29mOhm @ 7.6A, 10V | 20mOhm @ 9A, 10V | 16mOhm @ 8.9A, 10V | 16mOhm @ 8.9A, 10V |
Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V | 76 nC @ 10 V | 41 nC @ 10 V | 41 nC @ 10 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Feature | - | - | - | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Bulk |
Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V | 2750 pF @ 25 V | 1990 pF @ 25 V | 1990 pF @ 25 V |
Power Dissipation (Max) | 2.5W (Ta) | 2.5W (Ta) | 2.5W (Ta) | 2.5W (Ta) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.6A (Ta) | 9A (Ta) | 8.9A (Ta) | 8.9A (Ta) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Basis Produktnummer | FDS35 | FDS35 | FDS35 | - |
Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
Entworf fir Source Voltage (Vdss) | 80 V | 80 V | 80 V | 80 V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Eroflueden FDS3580 PDF DataDhusts an onsemi Dokumentatioun fir FDS3580 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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