FDP025N06 Tech Spezifikatioune
onsemi - FDP025N06 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDP025N06
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 4.5V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220-3 | |
| Serie | PowerTrench® | |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 75A, 10V | |
| Power Dissipation (Max) | 395W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 14885 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 226 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | |
| Basis Produktnummer | FDP025 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | Not Applicable |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDP025N06.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | FDP025N06 | FDP030N06 | FDP032N08B | FDP027N08B |
| Hiersteller | onsemi | Fairchild Semiconductor | Fairchild Semiconductor | onsemi |
| Package / Case | TO-220-3 | TO-220-3 | - | TO-220-3 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 226 nC @ 10 V | 151 nC @ 10 V | - | 178 nC @ 10 V |
| Supplier Device Package | TO-220-3 | TO-220-3 | - | TO-220-3 |
| Power Dissipation (Max) | 395W (Tc) | 231W (Tc) | - | 246W (Tc) |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | - | -55°C ~ 175°C (TJ) |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | - | 10V |
| Package protegéieren | Tube | Bulk | Bulk | Tube |
| Input Capacitance (Ciss) (Max) @ Vds | 14885 pF @ 25 V | 9815 pF @ 25 V | - | 13530 pF @ 40 V |
| Serie | PowerTrench® | PowerTrench® | * | PowerTrench® |
| Mounting Type | Through Hole | Through Hole | - | Through Hole |
| Vgs (th) (Max) @ Id | 4.5V @ 250µA | 4.5V @ 250µA | - | 4.5V @ 250µA |
| FET Feature | - | - | - | - |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 75A, 10V | 3.2mOhm @ 75A, 10V | - | 2.7mOhm @ 100A, 10V |
| Vgs (Max) | ±20V | ±20V | - | ±20V |
| FET Typ | N-Channel | N-Channel | - | N-Channel |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | 120A (Tc) | - | 120A (Tc) |
| Basis Produktnummer | FDP025 | - | - | FDP027 |
| Entworf fir Source Voltage (Vdss) | 60 V | 60 V | - | 80 V |
Eroflueden FDP025N06 PDF DataDhusts an onsemi Dokumentatioun fir FDP025N06 - onsemi.
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FDP027N08B MOSAMI Semiconductor/onsemiFDP032N08onsemiMOSFET N-CH 75V 120A TO220-3
FDP032N08Texas Instruments120A, 75V, 0.0032OHM, N CHANNELFDP032N08B-F102onsemiMOSFET N-CH 80V 120A TO220-3| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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