FDMS7681 Tech Spezifikatioune
onsemi - FDMS7681 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDMS7681
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 3V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-PQFN (4.9x5.8) | |
| Rds On (Max) @ Id, Vgs | 6.9mOhm @ 14A, 10V | |
| Power Dissipation (Max) | 2.5W (Ta), 33W (Tc) | |
| Package / Case | 8-PowerTDFN | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 14A (Ta), 28A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDMS7681.
| Produktiounsattriff |  |
 |
|
|
|---|---|---|---|---|
| Part Number | FDMS7681 | FDMS7672AS | FDMS7682 | FDMS7680 |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Power Dissipation (Max) | 2.5W (Ta), 33W (Tc) | 2.5W (Ta), 46W (Tc) | 2.5W (Ta), 33W (Tc) | 2.5W (Ta), 33W (Tc) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 1mA | 3V @ 250µA | 3V @ 250µA |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 14A (Ta), 28A (Tc) | 19A (Ta), 42A (Tc) | 16A (Ta), 22A (Tc) | 14A (Ta), 28A (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V | 46 nC @ 10 V | 30 nC @ 10 V | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 15 V | 2820 pF @ 15 V | 1885 pF @ 15 V | 1850 pF @ 15 V |
| Rds On (Max) @ Id, Vgs | 6.9mOhm @ 14A, 10V | 4mOhm @ 18A, 10V | 6.3mOhm @ 14A, 10V | 6.9mOhm @ 14A, 10V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Supplier Device Package | 8-PQFN (4.9x5.8) | 8-PQFN (5x6) | 8-PQFN (5x6) | 8-PQFN (5x6) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| FET Feature | - | - | - | - |
FDMS7672ASonsemiMOSFET N-CH 30V 19A/42A 8PQFNFDMS7682onsemiMOSFET N-CH 30V 16A/22A 8PQFNFDMS7680onsemiMOSFET N-CH 30V 14A/28A 8PQFN
FDMS7692AFairchild SemiconductorMOSFET N-CH 30V 13.5A/28A 8PQFNFDMS7676onsemiMOSFET N-CH 30V 16A/28A 8PQFNFDMS7694Fairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 1FDMS7680 MOSFairchild (onsemi)FDMS7692EFairchild (onsemi)FDMS7692 MOSFairchild (onsemi)FDMS7678onsemiMOSFET N-CH 30V 17.5A/26A 8PQFNFDMS7678 MOSFairchild (onsemi)FDMS7676Fairchild SemiconductorMOSFET N-CH 30V 16A/28A 8PQFNFDMS7672EFairchild (onsemi)FDMS7682 MOSFairchild (onsemi)FDMS7682Fairchild SemiconductorPOWER FIELD-EFFECT TRANSISTOR, 1FDMS7692onsemiMOSFET N-CH 30V 14A/28A 8PQFNFDMS7680Fairchild SemiconductorMOSFET N-CH 30V 14A/28A 8PQFNFDMS7694onsemiMOSFET N-CH 30V 13.2A/20A 8PQFN| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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