FDMC86116LZ Tech Spezifikatioune
onsemi - FDMC86116LZ technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDMC86116LZ
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 2.2V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-MLP (3.3x3.3) | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 103mOhm @ 3.3A, 10V | |
Power Dissipation (Max) | 2.3W (Ta), 19W (Tc) | |
Package / Case | 8-PowerWDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.3A (Ta), 7.5A (Tc) | |
Basis Produktnummer | FDMC86116 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDMC86116LZ.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDMC86116LZ | FDMC86106LZ | FDMC86183 | FDMC86102 |
Hiersteller | onsemi | Fairchild Semiconductor | onsemi | onsemi |
Power Dissipation (Max) | 2.3W (Ta), 19W (Tc) | 2.3W (Ta), 19W (Tc) | 52W (Tc) | 2.3W (Ta), 41W (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V |
Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
Vgs (Max) | ±20V | - | ±20V | ±20V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Feature | - | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V | 6 nC @ 10 V | 21 nC @ 10 V | 18 nC @ 10 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 103mOhm @ 3.3A, 10V | 103mOhm @ 3.3A, 10V | 12.8mOhm @ 16A, 10V | 24mOhm @ 7A, 10V |
Package / Case | 8-PowerWDFN | 8-PowerWDFN | 8-PowerWDFN | 8-PowerTDFN |
Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 50 V | 310 pF @ 50 V | 1515 pF @ 50 V | 965 pF @ 50 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Supplier Device Package | 8-MLP (3.3x3.3) | 8-MLP (3.3x3.3) | 8-PQFN (3.3x3.3), Power33 | Power33 |
Basis Produktnummer | FDMC86116 | FDMC86 | FDMC86 | FDMC86 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.3A (Ta), 7.5A (Tc) | 3.3A (Ta), 7.5A (Tc) | 47A (Tc) | 7A (Ta), 20A (Tc) |
Serie | PowerTrench® | - | - | PowerTrench® |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | - | 6V, 10V | 6V, 10V |
Vgs (th) (Max) @ Id | 2.2V @ 250µA | 2.2V @ 250µA | 4V @ 90µA | 4V @ 250µA |
Eroflueden FDMC86116LZ PDF DataDhusts an onsemi Dokumentatioun fir FDMC86116LZ - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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