FDMB3900AN Tech Spezifikatioune
onsemi - FDMB3900AN technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDMB3900AN
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 3V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-MLP, MicroFET (3x1.9) | |
| Serie | PowerTrench® | |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 7A, 10V | |
| Power - Max | 800mW | |
| Package / Case | 8-PowerWDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 890pF @ 13V | |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 25V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7A | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | FDMB3900 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDMB3900AN.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | FDMB3900AN | FDMB2307NZ | FDMC007N30D | FDMB2308PZ |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Package / Case | 8-PowerWDFN | 6-WDFN Exposed Pad | 8-PowerWDFN | 6-WDFN Exposed Pad |
| Basis Produktnummer | FDMB3900 | FDMB2307 | FDMC007 | FDMB2308 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 890pF @ 13V | - | 1110pF @ 15V, 2360pF @ 15V | 3030pF @ 10V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Vgs (th) (Max) @ Id | 3V @ 250µA | - | 3V @ 250µA | 1.5V @ 250µA |
| FET Feature | Logic Level Gate | Logic Level Gate | - | Logic Level Gate |
| Power - Max | 800mW | 800mW | 1.9W, 2.5W | 800mW |
| Entworf fir Source Voltage (Vdss) | 25V | - | 30V | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V | 28nC @ 5V | 34nC @ 10V | 30nC @ 10V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7A | - | 46A | - |
| Supplier Device Package | 8-MLP, MicroFET (3x1.9) | 6-MLP (2x3) | 8-Power33 (3x3) | 6-MLP (2x3) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 7A, 10V | - | 11.6mOhm @ 10A, 10V | 36mOhm @ 5.7A, 4.5V |
| Serie | PowerTrench® | PowerTrench® | - | PowerTrench® |
| Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) Common Drain | 2 N-Channel (Dual) | 2 P-Channel (Dual) Common Drain |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Eroflueden FDMB3900AN PDF DataDhusts an onsemi Dokumentatioun fir FDMB3900AN - onsemi.
FDMC008N08ConsemiMOSFET N-CHANNEL 80V 60A 8PQFN
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FDMA910PZonsemiMOSFET P-CH 20V 9.4A 6MICROFETFDMB3800NonsemiMOSFET 2N-CH 30V 8MLP MICROFET| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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