FDG6303N Tech Spezifikatioune
onsemi - FDG6303N technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDG6303N
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SC-88 (SC-70-6) | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 500mA, 4.5V | |
| Power - Max | 300mW | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 2.3nC @ 4.5V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 25V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 500mA | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | FDG6303 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDG6303N.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | FDG6303N | FDG6301N-F085 | FDG6306P | FDG6302P |
| Hiersteller | onsemi | onsemi | onsemi | onsemi |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V | 9.5pF @ 10V | 114pF @ 10V | 12pF @ 10V |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 500mA, 4.5V | 4Ohm @ 220mA, 4.5V | 420mOhm @ 600mA, 4.5V | 10Ohm @ 140mA, 4.5V |
| Entworf fir Source Voltage (Vdss) | 25V | 25V | 20V | 25V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 500mA | 220mA | 600mA | 140mA |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Serie | - | Automotive, AEC-Q101 | PowerTrench® | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | 1.5V @ 250µA | 1.5V @ 250µA | 1.5V @ 250µA |
| Power - Max | 300mW | 300mW | 300mW | 300mW |
| Basis Produktnummer | FDG6303 | FDG6301 | FDG6306 | FDG6302 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 2.3nC @ 4.5V | 0.4nC @ 4.5V | 2nC @ 4.5V | 0.31nC @ 4.5V |
| Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 P-Channel (Dual) | 2 P-Channel (Dual) |
| Supplier Device Package | SC-88 (SC-70-6) | SC-88 (SC-70-6) | SC-88 (SC-70-6) | SC-88 (SC-70-6) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 |
Eroflueden FDG6303N PDF DataDhusts an onsemi Dokumentatioun fir FDG6303N - onsemi.
FDG6301N_F085AMI Semiconductor/onsemi
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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