FDG311N Tech Spezifikatioune
onsemi - FDG311N technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDG311N
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 1.5V @ 250µA | |
Vgs (Max) | ±8V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SC-88 (SC-70-6) | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 115mOhm @ 1.9A, 4.5V | |
Power Dissipation (Max) | 750mW (Ta) | |
Package / Case | 6-TSSOP, SC-88, SOT-363 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 4.5 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.9A (Ta) | |
Basis Produktnummer | FDG311 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDG311N.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDG311N | FDG313N | FDG311N | FDG313N |
Hiersteller | onsemi | Fairchild Semiconductor | Fairchild Semiconductor | onsemi |
Serie | PowerTrench® | - | PowerTrench® | - |
Basis Produktnummer | FDG311 | FDG313 | - | FDG313 |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Supplier Device Package | SC-88 (SC-70-6) | SC-88 (SC-70-6) | SC-88 (SC-70-6) | SC-88 (SC-70-6) |
Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 10 V | 50 pF @ 10 V | 270 pF @ 10 V | 50 pF @ 10 V |
Vgs (th) (Max) @ Id | 1.5V @ 250µA | 1.5V @ 250µA | 1.5V @ 250µA | 1.5V @ 250µA |
Package protegéieren | Tape & Reel (TR) | Bulk | Bulk | Tape & Reel (TR) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (Max) | ±8V | ±8V | ±8V | ±8V |
Entworf fir Source Voltage (Vdss) | 20 V | 25 V | 20 V | 25 V |
Rds On (Max) @ Id, Vgs | 115mOhm @ 1.9A, 4.5V | 450mOhm @ 500mA, 4.5V | 115mOhm @ 1.9A, 4.5V | 450mOhm @ 500mA, 4.5V |
Package / Case | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.9A (Ta) | 950mA (Ta) | 1.9A (Ta) | 950mA (Ta) |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 2.7V, 4.5V | 2.5V, 4.5V | 2.7V, 4.5V |
FET Feature | - | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 4.5 nC @ 4.5 V | 2.3 nC @ 4.5 V | 4.5 nC @ 4.5 V | 2.3 nC @ 4.5 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Power Dissipation (Max) | 750mW (Ta) | 750mW (Ta) | 750mW (Ta) | 750mW (Ta) |
Eroflueden FDG311N PDF DataDhusts an onsemi Dokumentatioun fir FDG311N - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.