FDD86367-F085 Tech Spezifikatioune
onsemi - FDD86367-F085 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDD86367-F085
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-252AA | |
Serie | Automotive, AEC-Q101, PowerTrench® | |
Rds On (Max) @ Id, Vgs | 4.2mOhm @ 80A, 10V | |
Power Dissipation (Max) | 227W (Tj) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 4840 pF @ 40 V | |
Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 80 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Tc) | |
Basis Produktnummer | FDD86367 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDD86367-F085.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDD86367-F085 | FDD86113LZ | FDD86369-F085 | FDD86252 |
Hiersteller | onsemi | onsemi | onsemi | onsemi |
Rds On (Max) @ Id, Vgs | 4.2mOhm @ 80A, 10V | 104mOhm @ 4.2A, 10V | 7.9mOhm @ 80A, 10V | 52mOhm @ 5A, 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Entworf fir Source Voltage (Vdss) | 80 V | 100 V | 80 V | 150 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | 10V | 6V, 10V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Tc) | 4.2A (Ta), 5.5A (Tc) | 90A (Tc) | 5A (Ta), 27A (Tc) |
Basis Produktnummer | FDD86367 | FDD86113 | FDD86369 | FDD862 |
Input Capacitance (Ciss) (Max) @ Vds | 4840 pF @ 40 V | 285 pF @ 50 V | 2530 pF @ 40 V | 985 pF @ 75 V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 3V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V | 6 nC @ 10 V | 54 nC @ 10 V | 16 nC @ 10 V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Power Dissipation (Max) | 227W (Tj) | 3.1W (Ta), 29W (Tc) | 150W (Tj) | 3.1W (Ta), 89W (Tc) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Supplier Device Package | TO-252AA | TO-252AA | TO-252AA | TO-252AA |
Serie | Automotive, AEC-Q101, PowerTrench® | PowerTrench® | Automotive, AEC-Q101, PowerTrench® | PowerTrench® |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden FDD86367-F085 PDF DataDhusts an onsemi Dokumentatioun fir FDD86367-F085 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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