FDD850N10LD Tech Spezifikatioune
onsemi - FDD850N10LD technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDD850N10LD
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-252 (DPAK) | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 75mOhm @ 12A, 10V | |
Power Dissipation (Max) | 42W (Tc) | |
Package / Case | TO-252-5, DPak (4 Leads + Tab), TO-252AD | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1465 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 28.9 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15.3A (Tc) | |
Basis Produktnummer | FDD850 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDD850N10LD.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDD850N10LD | FDD850N10L | FDD86102 | FDD8453LZ_F085 |
Hiersteller | onsemi | onsemi | onsemi | Fairchild/ON Semiconductor |
Vgs (Max) | ±20V | ±20V | ±20V | 4.5V, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA | 4V @ 250µA | 6.7 mOhm @ 15A, 10V |
Serie | PowerTrench® | PowerTrench® | PowerTrench® | Automotive, AEC-Q101, PowerTrench® |
Rds On (Max) @ Id, Vgs | 75mOhm @ 12A, 10V | 75mOhm @ 12A, 10V | 24mOhm @ 8A, 10V | 50A (Tc) |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 100 V | - |
Package / Case | TO-252-5, DPak (4 Leads + Tab), TO-252AD | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - |
Basis Produktnummer | FDD850 | FDD850 | FDD861 | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15.3A (Tc) | 15.7A (Tc) | 8A (Ta), 36A (Tc) | 40V |
Input Capacitance (Ciss) (Max) @ Vds | 1465 pF @ 25 V | 1465 pF @ 25 V | 1035 pF @ 50 V | 64nC @ 10V |
FET Typ | N-Channel | N-Channel | N-Channel | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | 5V, 10V | 6V, 10V | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 28.9 nC @ 10 V | 28.9 nC @ 10 V | 19 nC @ 10 V | 3V @ 250µA |
Supplier Device Package | TO-252 (DPAK) | TO-252AA | TO-252AA | - |
FET Feature | - | - | - | N-Channel |
Power Dissipation (Max) | 42W (Tc) | 50W (Tc) | 3.1W (Ta), 62W (Tc) | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
Eroflueden FDD850N10LD PDF DataDhusts an onsemi Dokumentatioun fir FDD850N10LD - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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