FDD6N50FTM Tech Spezifikatioune
onsemi - FDD6N50FTM technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDD6N50FTM
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-252AA | |
Serie | UniFET™ | |
Rds On (Max) @ Id, Vgs | 1.15Ohm @ 2.75A, 10V | |
Power Dissipation (Max) | 89W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 960 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 19.8 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 500 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.5A (Tc) | |
Basis Produktnummer | FDD6N50 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDD6N50FTM.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDD6N50FTM | FDD6N20TM | FDD6N50TM | FDD6N25TM |
Hiersteller | onsemi | onsemi | Fairchild Semiconductor | onsemi |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Serie | UniFET™ | UniFET™ | UniFET™ | UniFET™ |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.5A (Tc) | 4.5A (Tc) | 6A (Tc) | 4.4A (Tc) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Power Dissipation (Max) | 89W (Tc) | 40W (Tc) | 89W (Tc) | 50W (Tc) |
Entworf fir Source Voltage (Vdss) | 500 V | 200 V | 500 V | 250 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Rds On (Max) @ Id, Vgs | 1.15Ohm @ 2.75A, 10V | 800mOhm @ 2.3A, 10V | 900mOhm @ 3A, 10V | 1.1Ohm @ 2.2A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 960 pF @ 25 V | 230 pF @ 25 V | 9400 pF @ 25 V | 250 pF @ 25 V |
Supplier Device Package | TO-252AA | TO-252AA | TO-252, (D-Pak) | TO-252AA |
Vgs (th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
Basis Produktnummer | FDD6N50 | FDD6N20 | - | FDD6N25 |
Gate Charge (Qg) (Max) @ Vgs | 19.8 nC @ 10 V | 6.1 nC @ 10 V | 16.6 nC @ 10 V | 6 nC @ 10 V |
FET Feature | - | - | - | - |
Eroflueden FDD6N50FTM PDF DataDhusts an onsemi Dokumentatioun fir FDD6N50FTM - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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