FDD6796 Tech Spezifikatioune
onsemi - FDD6796 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDD6796
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-252AA | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 5.7mOhm @ 20A, 10V | |
Power Dissipation (Max) | 3.7W (Ta), 42W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2315 pF @ 13 V | |
Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 25 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Ta), 40A (Tc) | |
Basis Produktnummer | FDD679 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDD6796.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDD6796 | FDD6796A | FDD6780A | FDD6796A |
Hiersteller | onsemi | Fairchild Semiconductor | Fairchild Semiconductor | onsemi |
Power Dissipation (Max) | 3.7W (Ta), 42W (Tc) | 3.7W (Ta), 42W (Tc) | 3.7W (Ta), 32.6W (Tc) | 3.7W (Ta), 42W (Tc) |
Basis Produktnummer | FDD679 | - | FDD678 | FDD679 |
Rds On (Max) @ Id, Vgs | 5.7mOhm @ 20A, 10V | 5.7mOhm @ 20A, 10V | 8.6mOhm @ 16.4A, 10V | 5.7mOhm @ 20A, 10V |
Entworf fir Source Voltage (Vdss) | 25 V | 25 V | 25 V | 25 V |
Input Capacitance (Ciss) (Max) @ Vds | 2315 pF @ 13 V | 1780 pF @ 13 V | 1235 pF @ 13 V | 1780 pF @ 13 V |
Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA |
Package protegéieren | Tape & Reel (TR) | Bulk | Bulk | Tape & Reel (TR) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V | 34 nC @ 10 V | 24 nC @ 10 V | 34 nC @ 10 V |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Ta), 40A (Tc) | 20A (Ta), 40A (Tc) | 16.4A (Ta), 30A (Tc) | 20A (Ta), 40A (Tc) |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Supplier Device Package | TO-252AA | TO-252, (D-Pak) | D-PAK (TO-252) | TO-252AA |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | - | 4.5V, 10V | 4.5V, 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Eroflueden FDD6796 PDF DataDhusts an onsemi Dokumentatioun fir FDD6796 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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