FDD6635 Tech Spezifikatioune
onsemi - FDD6635 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDD6635
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Vgs (th) (Max) @ Id | 3V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-252AA | |
| Serie | PowerTrench® | |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 15A, 10V | |
| Power Dissipation (Max) | 3.8W (Ta), 55W (Tc) | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 20 V | |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 35 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15A (Ta), 59A (Tc) | |
| Basis Produktnummer | FDD663 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDD6635.
| Produktiounsattriff |  |
 |
 |
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|---|---|---|---|---|
| Part Number | FDD6635 | FDD6632 | FDD6637-F085 | FDD6632 |
| Hiersteller | onsemi | Fairchild Semiconductor | onsemi | onsemi |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15A (Ta), 59A (Tc) | 9A (Tc) | 21A (Tc) | 9A (Tc) |
| Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA |
| Basis Produktnummer | FDD663 | - | FDD663 | FDD663 |
| Serie | PowerTrench® | UltraFET™ | Automotive, AEC-Q101, PowerTrench® | UltraFET™ |
| Supplier Device Package | TO-252AA | TO-252, (D-Pak) | TO-252AA | TO-252AA |
| FET Typ | N-Channel | N-Channel | P-Channel | N-Channel |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 15A, 10V | 70mOhm @ 9A, 10V | 11.6mOhm @ 14A, 10V | 70mOhm @ 9A, 10V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
| Vgs (Max) | ±20V | ±20V | ±25V | ±20V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Power Dissipation (Max) | 3.8W (Ta), 55W (Tc) | 15W (Tc) | 68W (Tc) | 15W (Tc) |
| Entworf fir Source Voltage (Vdss) | 35 V | 30 V | 35 V | 30 V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V | 4 nC @ 5 V | 63 nC @ 10 V | 4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 20 V | 255 pF @ 15 V | 2370 pF @ 20 V | 255 pF @ 15 V |
| FET Feature | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Eroflueden FDD6635 PDF DataDhusts an onsemi Dokumentatioun fir FDD6635 - onsemi.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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