FDD6530A Tech Spezifikatioune
onsemi - FDD6530A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDD6530A
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 1.2V @ 250µA | |
Vgs (Max) | ±8V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-252AA | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 32mOhm @ 8A, 4.5V | |
Power Dissipation (Max) | 3.3W (Ta), 33W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 21A (Ta) | |
Basis Produktnummer | FDD653 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDD6530A.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDD6530A | FDD6530A | FDD6512A | FDD6296 |
Hiersteller | onsemi | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor |
Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 10 V | 710 pF @ 10 V | 1082 pF @ 10 V | 1440 pF @ 15 V |
Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 20 V | 30 V |
FET Feature | - | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 4.5 V | 9 nC @ 4.5 V | 19 nC @ 4.5 V | 31.5 nC @ 10 V |
Vgs (th) (Max) @ Id | 1.2V @ 250µA | 1.2V @ 250µA | 1.5V @ 250µA | 3V @ 250µA |
Package protegéieren | Tape & Reel (TR) | Bulk | Bulk | Bulk |
Basis Produktnummer | FDD653 | - | - | - |
Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | TO-252AA | TO-252, (D-Pak) | TO-252, (D-Pak) | TO-252, (D-Pak) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (Max) | ±8V | ±8V | ±12V | ±20V |
Rds On (Max) @ Id, Vgs | 32mOhm @ 8A, 4.5V | 32mOhm @ 8A, 4.5V | 21mOhm @ 10.7A, 4.5V | 8.8mOhm @ 15A, 10V |
Power Dissipation (Max) | 3.3W (Ta), 33W (Tc) | 3.3W (Ta), 33W (Tc) | 3.8W (Ta), 43W (Tc) | 3.8W (Ta), 52W (Tc) |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 2.5V, 4.5V | 2.5V, 4.5V | 4.5V, 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 21A (Ta) | 21A (Ta) | 10.7A (Ta), 36A (Tc) | 15A (Ta), 50A (Tc) |
Eroflueden FDD6530A PDF DataDhusts an onsemi Dokumentatioun fir FDD6530A - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.