FDD5N60NZTM Tech Spezifikatioune
onsemi - FDD5N60NZTM technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDD5N60NZTM
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-252AA | |
Serie | UniFET-II™ | |
Rds On (Max) @ Id, Vgs | 2Ohm @ 2A, 10V | |
Power Dissipation (Max) | 83W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Tc) | |
Basis Produktnummer | FDD5N60 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDD5N60NZTM.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDD5N60NZTM | FDD5N50NZTM | FDD6030BL | FDD5N50NZFTM |
Hiersteller | onsemi | onsemi | Fairchild Semiconductor | Fairchild Semiconductor |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 4.5V, 10V | 10V |
Serie | UniFET-II™ | UniFET™ | PowerTrench® | UniFET-II™ |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 25 V | 440 pF @ 25 V | 1143 pF @ 15 V | 485 pF @ 25 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Supplier Device Package | TO-252AA | TO-252AA | TO-252, (D-Pak) | TO-252, (D-Pak) |
Vgs (Max) | ±25V | ±25V | ±20V | ±25V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Tc) | 4A (Tc) | 10A (Ta), 42A (Tc) | 3.7A (Tc) |
Rds On (Max) @ Id, Vgs | 2Ohm @ 2A, 10V | 1.5Ohm @ 2A, 10V | 16mOhm @ 10A, 10V | 1.75Ohm @ 1.85A, 10V |
FET Feature | - | - | - | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Bulk |
Basis Produktnummer | FDD5N60 | FDD5N50 | - | - |
Power Dissipation (Max) | 83W (Tc) | 62W (Tc) | 1.6W (Ta), 50W (Tc) | 62.5W (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 600 V | 500 V | 30 V | 500 V |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V | 12 nC @ 10 V | 31 nC @ 10 V | 12 nC @ 10 V |
Vgs (th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 3V @ 250µA | 5V @ 250µA |
Eroflueden FDD5N60NZTM PDF DataDhusts an onsemi Dokumentatioun fir FDD5N60NZTM - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.