FDD5810 Tech Spezifikatioune
onsemi - FDD5810 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDD5810
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 2V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-252AA | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 22mOhm @ 32A, 10V | |
Power Dissipation (Max) | 72W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1890 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.4A (Ta), 37A (Tc) | |
Basis Produktnummer | FDD581 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDD5810.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDD5810 | FDD5N50FTM | FDD5680 | FDD5810-F085 |
Hiersteller | onsemi | Fairchild Semiconductor | Fairchild Semiconductor | onsemi |
Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | 10V | 6V, 10V | 5V, 10V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Basis Produktnummer | FDD581 | - | - | FDD581 |
FET Feature | - | - | - | - |
Serie | - | PowerTrench® | PowerTrench® | Automotive, AEC-Q101, PowerTrench® |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Power Dissipation (Max) | 72W (Tc) | 40W (Tc) | 2.8W (Ta), 60W (Tc) | 72W (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V | 15 nC @ 10 V | 46 nC @ 10 V | 34 nC @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7.4A (Ta), 37A (Tc) | 3.5A (Tc) | 8.5A (Ta) | 7.4A (Ta), 37A (Tc) |
Rds On (Max) @ Id, Vgs | 22mOhm @ 32A, 10V | 1.55Ohm @ 1.75A, 10V | 21mOhm @ 8.5A, 10V | 22mOhm @ 32A, 10V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (th) (Max) @ Id | 2V @ 250µA | 5V @ 250µA | 4V @ 250µA | 2V @ 250µA |
Package protegéieren | Tape & Reel (TR) | Bulk | Bulk | Tape & Reel (TR) |
Entworf fir Source Voltage (Vdss) | 60 V | 500 V | 60 V | 60 V |
Supplier Device Package | TO-252AA | TO-252, (D-Pak) | TO-252, (D-Pak) | TO-252AA |
Input Capacitance (Ciss) (Max) @ Vds | 1890 pF @ 25 V | 650 pF @ 25 V | 1835 pF @ 30 V | 1890 pF @ 25 V |
Vgs (Max) | ±20V | ±30V | ±20V | ±20V |
Eroflueden FDD5810 PDF DataDhusts an onsemi Dokumentatioun fir FDD5810 - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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