FDD306P Tech Spezifikatioune
onsemi - FDD306P technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - FDD306P
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 1.5V @ 250µA | |
Vgs (Max) | ±8V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-252AA | |
Serie | PowerTrench® | |
Rds On (Max) @ Id, Vgs | 28mOhm @ 6.7A, 4.5V | |
Power Dissipation (Max) | 52W (Ta) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1290 pF @ 6 V | |
Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 4.5 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 12 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.7A (Ta) | |
Basis Produktnummer | FDD306 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi FDD306P.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | FDD306P | FDD3570 | FDD3580 | FDD3570 |
Hiersteller | onsemi | onsemi | onsemi | Fairchild Semiconductor |
Rds On (Max) @ Id, Vgs | 28mOhm @ 6.7A, 4.5V | 20mOhm @ 10A, 10V | 29mOhm @ 7.7A, 10V | 20mOhm @ 10A, 10V |
FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
Serie | PowerTrench® | PowerTrench® | PowerTrench® | PowerTrench® |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Basis Produktnummer | FDD306 | FDD357 | FDD358 | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 6V, 10V | 6V, 10V | 6V, 10V |
Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 4.5 V | 76 nC @ 10 V | 49 nC @ 10 V | 76 nC @ 10 V |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Vgs (Max) | ±8V | ±20V | ±20V | ±20V |
Power Dissipation (Max) | 52W (Ta) | 3.4W (Ta), 69W (Tc) | 3.8W (Ta), 42W (Tc) | 3.4W (Ta), 69W (Tc) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Bulk |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 1290 pF @ 6 V | 2800 pF @ 40 V | 1760 pF @ 40 V | 2800 pF @ 40 V |
Entworf fir Source Voltage (Vdss) | 12 V | 80 V | 80 V | 80 V |
Vgs (th) (Max) @ Id | 1.5V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.7A (Ta) | 10A (Ta) | 7.7A (Ta) | 10A (Ta) |
Supplier Device Package | TO-252AA | TO-252AA | TO-252AA | TO-252, (D-Pak) |
FET Feature | - | - | - | - |
Eroflueden FDD306P PDF DataDhusts an onsemi Dokumentatioun fir FDD306P - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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